2sc5778 Sanyo Semiconductor Corporation, 2sc5778 Datasheet - Page 2

• Manufacturer Part Number: 2sc5778
• Description: Npn Triple Diffused Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Switching Time Test Circuit
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Diode Forward Voltage
100
1.0
10
14
12
10
8
6
4
2
7
5
3
2
7
5
3
2
0
0.1
0
1
INPUT
2
Parameter
PW=20 s
D.C. 1%
Collector-to-Emitter Voltage, V CE -- V
50
2
3
Collector Current, I C -- A
3
5
V R
V BE = --5V
7
I C -- V CE
h FE -- I C
4
1.0
I B1
I B2
R B
100 F
5
+
2
6
3
V CE (sat)
V BE (sat)
Symbol
I B =0
h FE 1
h FE 2
470 F
t stg
7
V F
t f
V CC =200V
5
+
8
7
V CE =5V
OUTPUT
10
R L =28.6
V CE =5V, I C =1A
V CE =5V, I C =11A
I C =10A, I B =2.5A
I C =10A, I B =2.5A
I C =7A, I B1 =0.9A, I B2 =--3.5A
I C =7A, I B1 =0.9A, I B2 =--3.5A
I EC =12A
IT03523
IT03525
9
10
2
2SC5778
Conditions
1.0
0.1
10
16
14
12
10
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
0.1
0
I C / I B =5
0.2
2
Base-to-Emitter Voltage, V BE -- V
3
0.4
Collector Current, I C -- A
5
V CE (sat) -- I C
min
7
I C -- V BE
0.6
1.0
8
4
Ratings
0.8
typ
2
3
1.0
5
max
3.0
1.5
3.0
0.2
2.2
7
7
V CE =5V
1.2
10
No.6992-2/4
IT03524
IT03526
Unit
V
V
V
s
s
1.4
2