2sc5777 Sanyo Semiconductor Corporation, 2sc5777 Datasheet - Page 2
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2sc5777
Manufacturer Part Number
2sc5777
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.2SC5777.pdf
(4 pages)
Continued from preceding page.
Switching Time Test Circuit
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Diode Forward Voltage
100
1.0
10
10
9
8
7
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
0.1
0
1
INPUT
PW=20 s
D.C. 1%
Parameter
2
Collector-to-Emitter Voltage, V CE -- V
50
2
3
Collector Current, I C -- A
3
V R
V BE = --5V
5
I C -- V CE
h FE -- I C
4
7
I B1
I B2
R B
100 F
1.0
5
+
6
2
V CE (sat)
V BE (sat)
Symbol
470 F
h FE 1
h FE 2
7
t stg
V F
t f
V CC =200V
3
+
8
I B =0
V CE =5V
OUTPUT
5
R L =40
V CE =5V, I C =1A
V CE =5V, I C =7A
I C =6.3A, I B =1.6A
I C =6.3A, I B =1.6A
I C =5A, I B1 =0.8A, I B2 =--2.5A
I C =5A, I B1 =0.8A, I B2 =--2.5A
I EC =8A
9
IT03533
IT03535
7
10
10
2SC5777
Conditions
0.01
1.0
0.1
10
10
9
8
7
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0
V CE =5V
I C / I B =5
0.2
2
Base-to-Emitter Voltage, V BE -- V
3
Collector Current, I C -- A
0.4
V CE (sat) -- I C
5
min
I C -- V BE
7
8
4
0.6
1.0
Ratings
typ
0.8
2
3
max
3.0
1.5
3.0
0.2
2.2
1.0
7
5
No.6991-2/4
IT03534
IT03536
7
Unit
V
V
V
s
s
1.2
10