2sc5722 Sanyo Semiconductor Corporation, 2sc5722 Datasheet

2sc5722

Manufacturer Part Number

2sc5722

Description

Npn Triple Diffused Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC5722.pdf (4 pages)

Current page: 1 of 4
Download datasheet (32Kb)

Ordering number : ENN7402

2SC5722

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Collector Sustain Voltage

Emitter Cutoff Current

DC Current Gain

Collectoe-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Storage Time

Fall Time

•

High speed.

High breakdown voltage(V CBO =1500V).

High reliability(Adoption of HVP process).

Adoption of MBIT process.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V CEO (sus)

NPN Triple Diffused Planar Silicon Transistor

Ultrahigh-Definition CRT Display Horizontal

Deflection Output Applications

V CE (sat)

V BE (sat)

Symbol

h FE (1)

h FE (2)

V CBO

V CEO

V EBO

I CBO

I EBO

I CES

Tstg

I CP

t stg

P C

I C

t f

Tc=25 C

V CB =800V, I E =0

V CE =1500V, R BE =0

I C =100mA, I B =0

V EB =4V, I C =0

V CE =5V, I C =1A

V CE =5V, I C =16A

I C =14.4A, I B =3.6A

I C =10A, I B1 =2A, I B2 =--4A

2SC5722

Conditions

min

800

O2203 TS IM TA-3625

Ratings

typ

Ratings

--55 to +150

max

1500

800

140

150

3.5

1.0

1.5

3.0

0.2

No.7402-1/4

Unit

Related parts for 2sc5722

2sc5722 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC5722 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications ...

Page 2

... Collector-to-Emitter Voltage 100 1 0.1 1.0 Collector Current 2SC5722 IT02400 =5V 1.0 0 IT02402 Switching Time Test Circuit I B1 PW= INPUT ...

Page 3

... Tc= Single pulse 0. 1.0 100 Collector-to-Emitter Voltage 3.5 3.0 2.5 2.0 1.5 1.0 0 100 80 Ambient Temperature 2SC5722 =200V load 0.1 IT02404 100 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. 2SC5722 PS No.7402-4/4 ...

Related keywords

2sc5722 datasheet
2sc5722 data sheet
2sc5722 pdf datasheet
2sc5722 component
2sc5722 part
2sc5722 distributor
2sc5722 RoHS
2sc5722 datasheet download