2sc5794 Sanyo Semiconductor Corporation, 2sc5794 Datasheet

2sc5794

Manufacturer Part Number

2sc5794

Description

Npn Triple Diffused Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC5794.pdf (4 pages)

Current page: 1 of 4
Download datasheet (30Kb)

Ordering number : ENN7452

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Collector-to-Emitter Breakdown Voltage

Emitter Cutoff Current

•

High speed.

High breakdown voltage(V CBO =1600V).

High reliability(Adoption of HVP process).

Adoption of MBIT process.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V( BR)CEO

Symbol

V CBO

V CEO

V EBO

I CBO

I CES

I EBO

Tstg

I CP

Horizontal Deflection Output Applications

P C

I C

Tc=25 C

V CB =800V, I E =0

V CE =1600V, R BE =0

I C =10mA, R BE =

V EB =4V, I C =0

2SC5794

Ultrahigh-Definition CRT Display

Conditions

Package Dimensions

unit : mm

2174A

Conditions

NPN Triple Diffused Planar Silicon Transistor

5.45

16.0

2.8

3.4

0.7

2.0

[2SC5794]

min

800

31504 TS IM TA-100374

5.6

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PMLH

Ratings

0.9

typ

Ratings

3.1

2.1

2SC5794

Continued on next page.

--55 to +150

max

1600

800

100

150

3.0

1.0

No.7452-1/4

Unit

Related parts for 2sc5794

2sc5794 Summary of contents

Page 1

... Conditions V CBO V CEO V EBO Tc= Tstg Symbol Conditions I CBO V CB =800V CES V CE =1600V BR)CEO I C =10mA EBO V EB =4V 2SC5794 [2SC5794] 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0 Base 5. Collector 3 : Emitter SANYO : TO-3PMLH Ratings 1600 800 ...

Page 2

... Collector Current 2SC5794 Symbol Conditions =5V = =5V =18A V CE (sat =16A = (sat =16A =4A t stg I C =12A =2A =-- =12A =2A =--6A ...

Page 3

... Tc= Single pulse 0. 1.0 100 Collector-to-Emitter Voltage 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 100 Ambient Temperature 2SC5794 =200V load 0.1 IT03587 100 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. 2SC5794 PS No.7452-4/4 ...

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