2sc5850ldtl-e Renesas Electronics Corporation., 2sc5850ldtl-e Datasheet - Page 3

• Manufacturer Part Number: 2sc5850ldtl-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC5850
Main Characteristics
Rev.1.00 Aug 10, 2005 page 3 of 5
150
100
0.9
0.8
0.7
0.6
0.5
0.4
50
5
4
3
2
1
0
0
–20
Maximum Collector Dissipation Curve
Base to Emitter Voltage
Ambient Temperature
V
Ambient Temperature
Typical Transfer Characteristics
*Value on the glass epoxy board
CE
(10 mm x 10 mm x 0.7 mm)
Base to Emitter Voltage vs.
= 12 V
0.2
0
Ambient Temperature
50
0.4
20
0.6
40
100
V
I
C
Ta (°C)
Ta (°C)
CE
V
0.8
= 2 mA
60
BE
= 12 V
(V)
150
1.0
80
300
200
100
10
8
6
4
2
0
0
0.03
5
4
3
2
1
0
Collector to Emitter Voltage V
Collector to Base Voltage
Collector Output Capacitance vs.
V
Pulse test
CE
Typical Output Characteristics
DC Current Transfer Ratio vs.
Collector Current
Pulse test
0.1
Collector to Base Voltage
= 12 V
5
4
Collector Current
0.3
10
8
1.0
15
12
I
B
I
3
C
= 0
I
f = 1 MHz
E
(mA)
20
V
= 0
16
10
CB
CE
(V)
(V)
25
30
20