2sc5808 Sanyo Semiconductor Corporation, 2sc5808 Datasheet - Page 2

• Manufacturer Part Number: 2sc5808
• Description: Npn Triple Diffused Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Switching Time Test Circuit
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
INPUT
PW=20 s
D.C. 1%
Parameter
Parameter
50
V BE = --5V
V R
I B1
100 F
I B2
R B
+
V( BR)CBO
V( BR)CEO
V( BR)EBO
V CE (sat)
V BE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
V CES
470 F
I CBO
I EBO
h FE 1
h FE 2
h FE 3
Tstg
Cob
I CP
t stg
P C
t on
I C
I B
Tj
f T
t f
V CC =200V
+
OUTPUT
R L
PW 300 s, duty cycle 10%
Tc=25 C
V CB =400V, I E =0
V EB =5V, I C =0
V CE =5V, I C =0.3A
V CE =5V, I C =1.2A
V CE =5V, I C =1mA
V CE =10V, I C =0.3A
V CB =10V, f=1MHz
I C =1.2A, I B =0.24A
I C =1.2A, I B =0.24A
I C =1mA, I E =0
I C =5mA, R BE =
I E =1mA, I C =0
V CC =200V, I C =1.5A, I B1 =0.3A,
I B2 =--0.6A, R L =133
V CC =200V, I C =1.5A, I B1 =0.3A,
I B2 =--0.6A, R L =133
V CC =200V, I C =1.5A, I B1 =0.3A,
I B2 =--0.6A, R L =133
2SC5808
Conditions
Conditions
min
700
400
20
10
10
8
Ratings
typ
Ratings
20
20
--55 to +150
max
0.25
700
700
400
150
0.8
1.5
0.5
2.5
2.5
1.2
50
15
10
10
8
5
1
No.7079-2/4
Unit
Unit
MHz
pF
W
W
V
V
V
V
A
A
A
V
V
V
V
V
C
C
A
A
s
s
s