2sc5811 Sanyo Semiconductor Corporation, 2sc5811 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/5/586/sanyo_semiconductor_corporation_sml.jpg)
2sc5811
Manufacturer Part Number
2sc5811
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.2SC5811.pdf
(4 pages)
0.01
1.0
0.1
1.0
0.1
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0.1
1.0
0
Tc=25 C
Single pulse
I CP =16A
I C =8A
2
20
2
3
Collector-to-Emitter Voltage, V CE -- V
Ambient Temperature, Ta -- C
5 7
3
40
Forward Bias A S O
Collector Current, I C -- A
SW Time -- I C
10
5
60
P C -- Ta
7
2
1.0
80
3
5
100
7
2
100
120
3
2
V CC =200V
I C / I B1 =6
I B2 / I B1 =3
R load
3
5
140
IT03899
IT03901
IT03903
5 7 100
7
160
10
2SC5811
1.0
0.1
1.0
0.1
10
10
80
70
65
60
50
40
30
20
10
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
100
0
2
0
3
20
Collector-to-Emitter Voltage, V CE -- V
2
40
5
Case Temperature, Tc -- C
Reverse Bias A S O
Base Current, I B2 -- A
SW Time -- I B2
3
7
60
P C -- Tc
1.0
5
80
7
100
2
1000
120
3
L=500 H
I B2 = --2A
Tc=25 C
Single pulse
V CC =200V
I C =3A
I B1 =0.5A
R load
140
No.7415-3/4
2
IT03902
IT03904
IT03900
5
160
7
3