2sc5628xz-tl-e Renesas Electronics Corporation., 2sc5628xz-tl-e Datasheet

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2sc5628xz-tl-e

Manufacturer Part Number
2sc5628xz-tl-e
Description
Silicon Npn Epitaxial High Frequency Amplifier / Oscillator
Manufacturer
Renesas Electronics Corporation.
Datasheet
Features
Outline
Note: Marking is “XZ-”.
Super compact package;
(1.4 0.8 0.59mm)
High power gain and low noise figure;
(PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, V
High Frequency Amplifier / Oscillator
MFPAK
Silicon NPN Epitaxial
2SC5628
3
CE
= 1 V)
2
1
1. Emitter
2. Base
3. Collector
ADE-208-979A (Z)
2nd. Edition
April 2001

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2sc5628xz-tl-e Summary of contents

Page 1

High Frequency Amplifier / Oscillator Features Super compact package; (1.4 0.8 0.59mm) High power gain and low noise figure 1.1 dB typ 900 Mhz, V Outline MFPAK Note: Marking is “XZ-”. ...

Page 2

Absolute Maximum Ratings ( Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Electrical Characteristics ( Item Symbol Collector to ...

Page 3

Main Characteristics Maximum Collector Dissipation Curve 200 150 100 100 Ambient Temperature Collector Output Capacitance vs. Collector to Base Voltage 2.0 1.6 1.2 0.8 0.4 0 0.2 0.5 2 0.1 1 Collector to Base ...

Page 4

Power Gain vs. Collector Current 900MHz Collector Current I S Parameter vs. Collector Current 1GHz ...

Page 5

S11 Parameter vs. Frequency Condition : 5mA CE ...

Page 6

S11 Parameter vs. Frequency Condition : 100 to 2000 MHz (100 ...

Page 7

Sparameter ( mA S11 S21 f (MHz) MAG ANG MAG 100 0.815 –46.1 13.63 200 0.734 –84.6 10.68 300 0.692 –111.2 8.23 400 0.665 –127.4 6.58 500 0.650 ...

Page 8

Sparameter ( mA S11 S21 f (MHz) MAG ANG MAG 100 0.826 –39.3 14.04 200 0.746 –74.6 11.47 300 0.685 –100.5 9.14 400 0.646 –117.4 7.41 500 ...

Page 9

Package Dimensions 1.4 0.05 3-0.2 0.45 0.45 0.9 0.1 +0.1 +0.1 0.15 -0.05 –0.05 Hitachi Code JEDEC EIAJ Mass (reference value) 2SC5628 Unit: mm MFPAK — — 0.0016 g 9 ...

Page 10

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may ...

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