2sc5624 Renesas Electronics Corporation., 2sc5624 Datasheet

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2sc5624

Manufacturer Part Number
2sc5624
Description
Silicon Npn Epitaxial High Frequency Low Noise Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
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Price
Part Number:
2SC5624
Manufacturer:
HITACHI/日立
Quantity:
20 000
2SC5624
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier
Features
Outline
Note: Marking is “VH”-.
Rev.2.00, Oct.21.2003, page 1 of 7
High gain bandwidth product
f
High power gain and low noise figure ;
PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz
T
= 28 GHz typ.
CMPAK-4
3
2
4
1
1. Emitter
2. Collector
3. Emitter
4. Base
(Previous ADE-208-978(Z))
REJ03G0129-0200Z
Oct.21.2003
Rev.2.00

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2sc5624 Summary of contents

Page 1

... Silicon NPN Epitaxial High Frequency Low Noise Amplifier Features High gain bandwidth product GHz typ. T High power gain and low noise figure ; typ 1.2 dB typ 1.8 GHz Outline CMPAK-4 Note: Marking is “VH”-. Rev.2.00, Oct.21.2003, page ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown V (BR)CBO voltage Collector cutoff current I CBO Collector cutoff current ...

Page 3

... Main Characteristics Maximum Collector Dissipation Curve 200 150 100 100 Ambient Temperature Collector Output Capacitance vs. Collector to Base Voltage 1.0 0.8 0.6 0.4 0.2 0 0.1 0.2 0 Collector to Base Voltage Rev.2.00, Oct.21.2003, page Current Transfer Ratio vs. 200 100 0 150 200 2 1 Collector Current Gain Bandwidth Product vs ...

Page 4

... Power Gain vs. Collector Current 1.8 GHz Collector Current S21 Parameter vs. Collector Current GHz Collector Current Rev.2.00, Oct.21.2003, page Noise Figure vs. Collector Current ...

Page 5

... S11 Parameter vs. Frequency Condition ; 100 to 3000 MHz (100 MHz step) S12 Parameter vs. Frequency Scale: 0.02 / div. 90 120 150 180 150 120 90 Condition ; 100 to 3000 MHz (100 MHz step) Rev ...

Page 6

... S parameter ( mA S11 S21 f (MHz) MAG ANG MAG 100 0.445 –27.3 46.66 200 0.447 –54.4 42.27 300 0.439 –78.7 36.16 400 0.432 –98.8 30.59 500 0.424 –112.8 25.84 600 0.414 –124.3 22.15 700 0.407 –133.4 19.22 800 0.398 –141.5 16.94 900 0.390 –147.9 15.05 1000 0.386 – ...

Page 7

... Package Dimensions 2.0 ± 0.2 1.3 ± 0.2 0.65 0.65 + 0.1 0.3 – 0.05 + 0.1 0.3 – 0.05 0.65 0.6 1.25 ± 0.2 Rev.2.00, Oct.21.2003, page 0.1 0.3 + 0.1 0.16 – 0.05 – 0.06 0 – 0.1 + 0.1 0.4 – 0.05 Package Code JEDEC JEITA Mass (reference value January, 2003 Unit: mm CMPAK-4(T) — Conforms 0.006 g ...

Page 8

Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...

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