2sc5646a Sanyo Semiconductor Corporation, 2sc5646a Datasheet

2sc5646a

Manufacturer Part Number

2sc5646a

Description

Npn Epitaxial Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC5646A.pdf (7 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

2sc5646a-TL-H

Quantity:

8 000

Current page: 1 of 7
Download datasheet (56Kb)

Ordering number : ENA1120

2SC5646A

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : NF

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

•

Low-noise

High cut-off frequency : f T =10GHz typ (V CE =1V).

Low-voltage operation.

High gain

Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm).

Halogen free compliance.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

: NF=1.5dB typ (f=2GHz).

: f T =12.5GHz typ (V CE =3V).

: ⏐S21e⏐

V CBO

V CEO

V EBO

I C

P C

Tstg

I CBO

I EBO

h FE

=9.5dB typ (f=2GHz).

Symbol

NPN Epitaxial Planar Silicon Transistor

UHF to S-Band Low-Noise Amplifier,

OSC Applications

www.semiconductor-sanyo.com/network

SANYO Semiconductors

V CB =5V, I E =0A

V EB =1V, I C =0A

V CE =1V, I C =5mA

2SC5646A

Conditions

DATA SHEET

31710AB TK IM TC-00002250

min

100

Ratings

typ

Ratings

Continued on next page.

--55 to +150

max

100

150

160

1.0

No. A1120-1/7

Unit

μA

°C

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