2sc5646a Sanyo Semiconductor Corporation, 2sc5646a Datasheet
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2sc5646a
Manufacturer Part Number
2sc5646a
Description
Npn Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.2SC5646A.pdf
(7 pages)
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Ordering number : ENA1120
2SC5646A
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : NF
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
•
•
•
•
•
•
Low-noise
High cut-off frequency : f T =10GHz typ (V CE =1V).
Low-voltage operation.
High gain
Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm).
Halogen free compliance.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
Parameter
: NF=1.5dB typ (f=2GHz).
: f T =12.5GHz typ (V CE =3V).
: ⏐S21e⏐
V CBO
V CEO
V EBO
I C
P C
Tj
Tstg
I CBO
I EBO
h FE
2
=9.5dB typ (f=2GHz).
Symbol
Symbol
NPN Epitaxial Planar Silicon Transistor
UHF to S-Band Low-Noise Amplifier,
OSC Applications
www.semiconductor-sanyo.com/network
SANYO Semiconductors
V CB =5V, I E =0A
V EB =1V, I C =0A
V CE =1V, I C =5mA
2SC5646A
Conditions
Conditions
DATA SHEET
31710AB TK IM TC-00002250
min
100
Ratings
typ
Ratings
Continued on next page.
--55 to +150
max
100
150
160
1.0
30
10
No. A1120-1/7
9
4
2
Unit
mW
Unit
mA
μA
μA
°C
°C
V
V
V