2sc5647 Sanyo Semiconductor Corporation, 2sc5647 Datasheet

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2sc5647

Manufacturer Part Number
2sc5647
Description
Npn Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENN7326
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Marking : NH
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Low noise
High cutoff frequency : f T =9.0GHz typ (V CE =1V).
Low operating voltage.
High gain : S21e
Pay attention to
handling since it is
liable to be affected by
static electricity due to
the high-frequency
process adopted.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
2
=10.5dB typ (f=2GHz).
: NF=2.6dB typ (f=2GHz).
: f T =11.5GHz typ (V CE =3V).
Symbol
V CBO
V CEO
V EBO
Tstg
P C
I C
Tj
UHF to S Band Low-Noise Amplifier
2SC5647
Package Dimensions
unit : mm
2106A
Conditions
NPN Epitaxial Planar Silicon Transistor
1
and OSC Applications
0.5
3
1.6
0.3
0.5
2
0.2
[2SC5647]
D2502 TS IM TA-3664
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
0.1
0.75
0.6
Ratings
2SC5647
--55 to +150
0 to 0.1
150
20
80
9
4
2
No.7326-1/7
Unit
mW
mA
V
V
V
C
C

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2sc5647 Summary of contents

Page 1

... TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC5647 UHF to S Band Low-Noise Amplifier Package Dimensions unit : mm 2106A Symbol Conditions V CBO V CEO V EBO Tstg NPN Epitaxial Planar Silicon Transistor 2SC5647 and OSC Applications [2SC5647] 0.75 0 0.1 0.2 0.5 0.5 1 Base 2 : Emitter 3 : Collector SANYO : SMCP Ratings ...

Page 2

... Collector Current Cob -- 0.1 1.0 Collector-to-Base Voltage 2SC5647 Symbol Conditions I CBO V CB =5V EBO V EB =1V =1V =5mA =1V =3mA =3V =7mA Cob V CB =1V, f=1MHz ...

Page 3

... V CE =1V f=2GHz 1.0 10 Collector Current 100 100 Ambient Temperature 2SC5647 18 f=1GHz 1.0 IT05350 1.0 IT05352 120 140 160 ...

Page 4

... 3.184 173.92 0.018 3.149 168.04 0.037 3.074 156.88 0.074 2.982 146.19 0.105 2.846 136.13 0.130 2.747 126.87 ...

Page 5

... 12.114 161.90 0.018 10.916 146.76 0.034 8.394 124.70 0.055 6.553 109.97 0.071 5.260 99.45 0.086 4.431 91.17 0.099 3.812 84.04 0.111 3.323 77 ...

Page 6

... 9.445 168.58 0.017 9.067 158.60 0.033 8.064 140.96 0.059 7.025 126.79 0.080 6.045 115.37 0.095 5.331 106 ...

Page 7

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2002. Specifications and information herein are subject to change without notice. 2SC5647 PS No.7326-7/7 ...

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