2sc5606-t1 Renesas Electronics Corporation., 2sc5606-t1 Datasheet - Page 2

• Manufacturer Part Number: 2sc5606-t1
• Description: Npn Silicon Rf Transistor For Low Noise ?? High-gain Amplification 3-pin Ultra Super Minimold
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
FE
Notes 1. Pulse measurement: PW
Marking
CLASSIFICATION
Rank
h
FE
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
Parameter
60 to 100
S
S
S
S
21
12
21
12
UA
FB
(K –
(K
2
MAG
MSG
Symbol
h
C
– 1) )
S
FE
I
I
NF
re
CBO
EBO
f
21e
Note 2
Note 1
T
350 s, Duty Cycle
Note 3
Note 4
2
A
V
V
V
V
V
V
Z
V
V
V
= +25 C)
CB
EB
CE
CE
CE
CE
S
CB
CE
CE
Data Sheet P14658EJ3V0DS
= Z
= 5 V, I
= 1 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
opt
Test Conditions
C
E
C
C
C
E
C
C
C
= 0 mA
= 0 mA
= 5 mA
= 20 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 0 mA, f = 1 MHz
= 20 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 5 mA, f = 2 GHz,
2%
MIN.
60
10
–
–
–
–
–
–
–
TYP.
12.5
0.21
1.2
80
21
14
15
–
–
MAX.
200
200
100
1.5
0.3
–
–
–
–
2SC5606
GHz
Unit
nA
nA
dB
dB
pF
dB
dB
–