2sc5990 Sanyo Semiconductor Corporation, 2sc5990 Datasheet

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2sc5990

Manufacturer Part Number
2sc5990
Description
Npn Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sc5990-TD-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : ENN8118A
2SC5990
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : FH
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Relay drivers, lamp drivers, motor drivers, flash.
Adoption of FBET and MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow h FE width.
High allowable power dissipation.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Symbol
Symbol
V CBO
V CEO
V EBO
V CES
I CBO
I EBO
Tstg
h FE
I CP
P C
I C
I B
Tj
f T
Mounted on a ceramic board (250mm
Tc=25 C
V CB =40V, I E =0A
V EB =4V, I C =0A
V CE =2V, I C =500mA
V CE =10V, I C =500mA
2SC5990
Conditions
Conditions
62005 MS IM / 21405EA TS IM TB-00000376
2
0.8mm)
min
250
Ratings
typ
Ratings
400
Continued on next page.
--55 to +150
max
100
100
600
150
1.3
3.5
400
0.1
0.1
50
6
4
7
No.8118-1/4
MHz
Unit
Unit
mA
W
W
V
V
V
V
A
A
C
C
A
A

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2sc5990 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC5990 NPN Epitaxial Planar Silicon Transistor Converter Applications Symbol Conditions ...

Page 2

... Collector-to-Emitter Voltage 2SC5990 Symbol Conditions Cob V CB =10V, f=1MHz I C =1A =50mA V CE (sat =2A =100mA V BE (sat =2A =100mA V (BR)CBO =0A V (BR)CES I C =100 (BR)CEO I C =1mA (BR)EBO See specified Test Circuit ...

Page 3

... Collector Current = = 1 0 Tc= Single pulse 0. 1 0.1 Collector-to-Emitter Voltage 2SC5990 1000 100 0.01 IT08357 5 f=1MHz ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. 2SC5990 120 140 160 IT08365 PS No ...

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