2sc5967 Sanyo Semiconductor Corporation, 2sc5967 Datasheet - Page 2

• Manufacturer Part Number: 2sc5967
• Description: Npn Triple Diffused Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Switching Time Test Circuit
DC Current Gain
Collectoe-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
100
1.0
10
16
14
12
10
8
6
4
2
0
7
5
3
2
7
5
3
2
0.1
0
1
2
Parameter
Collector-to-Emitter Voltage, V CE -- V
PW=20 s
D.C. 1%
INPUT
3
50
2
Collector Current, I C -- A
5
3
V BE = --5V
V R
7
I C -- V CE
h FE -- I C
1.0
4
100 F
I B1
R B
I B2
5
2
+
3
6
V CE (sat)
V BE (sat)
Symbol
h FE 1
h FE 2
5
470 F
t stg
7
t f
V CC =200V
7
+
8
10
V CE =5V
OUTPUT
R L =20
V CE =5V, I C =1A
V CE =5V, I C =15A
I C =13.5A, I B =3.4A
I C =13.5A, I B =3.4A
I C =10A, I B1 =1.6A, I B2 =--5.0A
I C =10A, I B1 =1.6A, I B2 =--5.0A
I B =0
IT06366
IT06368
9
2
10
3
2SC5967
Conditions
0.01
1.0
0.1
10
25
20
15
10
5
0
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0
I C / I B =5
2
0.2
3
Base-to-Emitter Voltage, V BE -- V
Collector Current, I C -- A
5
0.4
V CE (sat) -- I C
7
min
I C -- V BE
1.0
15
4
0.6
Ratings
2
typ
3
0.8
5
max
7
1.5
3.0
0.2
10
1.0
7
3
V CE =5V
No.7614-2/4
IT06367
IT06369
2
Unit
V
V
s
s
1.2
3