2sc6094 Sanyo Semiconductor Corporation, 2sc6094 Datasheet

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2sc6094

Manufacturer Part Number
2sc6094
Description
Npn Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sc6094-TD-E
Manufacturer:
ON/安森美
Quantity:
20 000
Ordering number : ENA0410
2SC6094
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : QE
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Symbol
Symbol
V CBO
V CEO
V EBO
V CES
I CBO
I EBO
Tstg
h FE
I CP
P C
I C
I B
Tj
V CB =50V, I E =0A
V EB =4V, I C =0A
V CE =2V, I C =100mA
Mounted on a ceramic board (250mm
Tc=25 C
2SC6094
Conditions
Conditions
70306 / 53006EA MS IM TB-00002379
2
0.8mm)
min
300
Ratings
typ
Ratings
--55 to +150
Continued on next page.
max
100
100
600
150
6.5
1.3
3.5
600
60
No. A0410-1/4
3
5
1
1
Unit
Unit
mA
W
W
V
V
V
V
A
A
C
C
A
A

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2sc6094 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC6094 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Symbol ...

Page 2

... Collector-to-Emitter Voltage 2SC6094 Symbol Conditions =10V =500mA Cob V CB =10V, f=1MHz V CE (sat =1A =50mA V CE (sat =1A =100mA V BE (sat =1A =100mA V (BR)CBO =0A V (BR)CES I C =100 ...

Page 3

... = Tc= Single Pulse 0. 0.01 0.1 1.0 Collector-to-Emitter Voltage 2SC6094 = 100 1.0 0.01 IT11037 =10 f=1MHz ...

Page 4

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice. 2SC6094 120 140 160 IT11045 PS No ...

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