2sa2013 Sanyo Semiconductor Corporation, 2sa2013 Datasheet - Page 2

• Manufacturer Part Number: 2sa2013
• Description: Pnp / Npn Epitaxial Planar Silicon Transistors
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm
7007-004
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
0.4
--4
--3
--2
--1
0.5
0
0
--50mA
2SA2013
1
Bottom View
1.5
--60mA
Top View
4.5
1.6
3.0
--70mA
Parameter
2
Collector-to-Emitter Voltage, V CE -- V
--0.4
--80mA
--90mA
3
--0.8
I C -- V CE
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
--1.2
V (BR)CBO
V (BR)CEO
V (BR)CES
V (BR)EBO
V CE (sat)1
V CE (sat)2
1.5
V BE (sat)
Symbol
0.4
Cob
t stg
t on
t f
--1.6
I B =0mA
2SA2013 / 2SC5566
V CB =(--)10V, f=1MHz
I C =(--)1A, I B =(--)50mA
I C =(--)2A, I B =(- -)100mA
I C =(--)2A, I B =(- -)100mA
I C =(--)10 A, I E =0A
I C =(--)100 A, R BE =0
I C =(--)1mA, R BE =
I E =(- -)10 A, I C =0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IT00152
--2.0
Conditions
Switching Time Test Circuit
4
3
2
1
0
I C =10I B1 = --10I B2 =1A
For PNP, the polarity is reversed.
0
2SC5566
INPUT
PW=20 s
D.C. 1%
Collector-to-Emitter Voltage, V CE -- V
0.4
V R 10
50
V BE = --5V
(--50)100
(--50)100
min
(--)50
I C -- V CE
0.8
(--)6
I B1
100 F
I B2
R B
(--200)150 (--340)225
Ratings
(--105)85 (--180)130
+
(230)300
(--)0.89
typ
(24)15
(15)20
(30)35
1.2
470 F
V CC =25V
+
max
(--)1.2
1.6
OUTPUT
R L
25
I B =0mA
No.6307-2/5
IT00153
Unit
mV
mV
pF
ns
ns
ns
V
V
V
V
V
2.0