2sa2192 Sanyo Semiconductor Corporation, 2sa2192 Datasheet

2sa2192

Manufacturer Part Number

2sa2192

Description

Pnp Epitaxial Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SA2192.pdf (4 pages)

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Ordering number : ENA0307

2SA2192

Applications

Features

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitterr Saturation Voltage

•

Relay drivers, lamp drivers, motor drivers.

Adoption of MBIT process.

Large current capacitance.

Low collector-to-emitter saturation voltage.

High-speed switching.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

PNP Epitaxial Planar Silicon Transistor

High-Current Switching Applications

V CE (sat)

V BE (sat)

Symbol

V CBO

V CES

V CEO

V EBO

I CBO

I EBO

Tstg

h FE

Cob

I CP

P C

I C

I B

f T

SANYO Semiconductors

PW 100 s

Tc=25 C

V CB =- -40V, I E =0A

V EB =- -4V, I C =0A

V CE =- -2V, I C =--1A

V CE =- -5V, I C =--1A

V CB =- -10V, f=1MHz

I C =--5A, I B =--250mA

2SA2192

Conditions

71206 / 42506EA MS IM TB-00002245

DATA SHEET

min

200

Ratings

typ

--0.93

Ratings

--290

130

Continued on next page.

--55 to +150

max

0.95

--580

150

--50

--10

--13

--1.4

560

--10

--8

--2

No. A0307-1/4

Unit

MHz

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