bc847bpdw1t1 ON Semiconductor, bc847bpdw1t1 Datasheet
bc847bpdw1t1
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bc847bpdw1t1 Summary of contents
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... BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series Dual General Purpose Transistors NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • Pb−Free Packages are Available MAXIMUM RATINGS − ...
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... BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series ELECTRICAL CHARACTERISTICS (NPN) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mA) C Collector −Emitter Breakdown Voltage = 10 mA Collector −Base Breakdown Voltage = 10 mA Emitter −Base Breakdown Voltage = 1.0 mA Collector Cutoff Current ( 150° ...
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... BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series ELECTRICAL CHARACTERISTICS (PNP) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C Collector −Emitter Breakdown Voltage = −10 mA Collector −Base Breakdown Voltage = −10 mA Emitter −Base Breakdown Voltage = −1.0 mA Collector Cutoff Current (V = −30 V) ...
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... BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series TYPICAL NPN CHARACTERISTICS − BC846 25°C A 2.0 1.0 0.5 0.2 10 0.1 0.2 1 COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain 2.0 1.6 100 1 0 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2 BASE CURRENT (mA) B Figure 3. Collector Saturation Region 6.0 C 4.0 ob 2.0 0.1 0.2 0.5 1.0 2.0 5 REVERSE VOLTAGE (VOLTS) R Figure 5 ...
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... BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series TYPICAL PNP CHARACTERISTICS — BC846 V = −5 25°C A 2.0 1.0 0.5 0.2 −0.1 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 I , COLLECTOR CURRENT (AMP) C Figure 7. DC Current Gain −2.0 −1 −20 mA − −10 mA −1.2 −0.8 −0 25°C ...
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... BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series TYPICAL NPN CHARACTERISTICS − BC847 SERIES & BC848 SERIES 2.0 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5 COLLECTOR CURRENT (mAdc) C Figure 13. Normalized DC Current Gain 2 25°C A 1.6 1 0.8 0.4 0 0.02 0.1 1 BASE CURRENT (mA) B Figure 15. Collector Saturation Region 10 7 ...
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... BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series TYPICAL PNP CHARACTERISTICS — BC847 SERIES & BC848 SERIES 2 − 25°C A 1.0 0.7 0.5 0.3 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 − COLLECTOR CURRENT (mAdc) C Figure 19. Normalized DC Current Gain −2.0 −1.6 −1 − −0.8 − − − ...
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... BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0 1.0 −200 1 s −100 T = 25° 25°C − BC558 BC557 −10 BC556 −5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −2.0 −1.0 −5.0 − COLLECTOR−EMITTER VOLTAGE (V) CE Figure 26. Active Region Safe Operating Area ...
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... BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series −E− 0.2 (0.008 0.50 0.0197 0.40 0.0157 SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ...
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... BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...