bc847bpdw1t1 ON Semiconductor, bc847bpdw1t1 Datasheet - Page 4

• Manufacturer Part Number: bc847bpdw1t1
• Description: Dual General Purpose Transistors Npn/pnp Duals Complementary
• Manufacturer: ON Semiconductor

6.0
4.0
2.0
2.0
1.0
0.5
0.2
2.0
1.6
1.2
0.8
0.4
40
20
10
0
0.1
0.1
0.02
0.2
V
T
0.2
A
CE
0.05
Figure 3. Collector Saturation Region
= 25°C
= 5 V
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
20 mA
0.5
0.1
1.0
Figure 1. DC Current Gain
V
I
10 mA
C
R
Figure 5. Capacitance
I
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
C
1.0
0.2
I
=
B
, BASE CURRENT (mA)
50 mA
2.0
0.5
C
10
ib
C
5.0
100 mA
1.0
TYPICAL NPN CHARACTERISTICS − BC846
ob
2.0
10
100
20
T
A
5.0
200 mA
= 25°C
T
A
= 25°C
50
http://onsemi.com
10
100
20
4
500
200
100
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
50
20
1.0
0.8
0.6
0.4
0.2
0
0.2
0.2
Figure 4. Base−Emitter Temperature Coefficient
Figure 6. Current−Gain − Bandwidth Product
V
T
A
CE
= 25°C
V
V
V
T
= 5 V
A
BE(sat)
BE
CE(sat)
0.5
0.5
= 25°C
@ V
q
@ I
VB
@ I
CE
1.0
1.0
1.0
I
for V
C
C
C
= 5.0 V
I
I
Figure 2. “On” Voltage
, COLLECTOR CURRENT (mA)
/I
/I
C
C
B
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
B
BE
= 10
2.0
2.0
= 10
5.0
5.0
5.0
10
−55°C to 125°C
10
10
50 100
20
20
50
50
100
100
200
200