bc847bpdw1t1 ON Semiconductor, bc847bpdw1t1 Datasheet - Page 6

• Manufacturer Part Number: bc847bpdw1t1
• Description: Dual General Purpose Transistors Npn/pnp Duals Complementary
• Manufacturer: ON Semiconductor

7.0
5.0
3.0
2.0
1.0
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
2.0
1.6
1.2
0.8
0.4
10
0
0.4 0.6
0.02
0.2
Figure 13. Normalized DC Current Gain
Figure 15. Collector Saturation Region
0.5
10 mA
0.8
I
C
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
=
1.0
1.0
20 mA
I
Figure 17. Capacitances
V
C
I
C
TYPICAL NPN CHARACTERISTICS − BC847 SERIES & BC848 SERIES
R
, COLLECTOR CURRENT (mAdc)
0.1
, REVERSE VOLTAGE (VOLTS)
=
2.0
I
2.0
B
, BASE CURRENT (mA)
I
C
C
= 50 mA
ib
5.0
4.0
C
10
ob
6.0
1.0
T
8.0
A
20
I
C
= 25°C
10
= 100 mA
I
C
= 200 mA
V
T
T
A
50
CE
A
= 25°C
= 25°C
20
= 10 V
100
http://onsemi.com
10
200
40
20
6
400
300
200
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
1.2
1.6
2.0
2.4
2.8
40
30
80
60
20
0
0.1
0.2
0.5
Figure 18. Current−Gain − Bandwidth Product
T
A
−55°C to +125°C
0.7 1.0
Figure 14. “Saturation” and “On” Voltages
= 25°C
0.2
Figure 16. Base−Emitter Temperature
0.3
0.5
V
I
I
C
C
BE(sat)
I
0.7
C
, COLLECTOR CURRENT (mAdc)
, COLLECTOR CURRENT (mAdc)
2.0
, COLLECTOR CURRENT (mA)
1.0
1.0
@ I
3.0
V
Coefficient
CE(sat)
C
/I
2.0
B
= 10
3.0
V
5.0
@ I
BE(on)
C
5.0
/I
7.0
B
@ V
= 10
7.0
10
10
CE
10
= 10 V
20
20
V
T
30
A
CE
= 25°C
= 10 V
30
50
70
100
100
50