2sc4227-t1 Renesas Electronics Corporation., 2sc4227-t1 Datasheet - Page 2

• Manufacturer Part Number: 2sc4227-t1
• Description: High Frequency Low Noise Amplifier Npn Silicon Epitaxial Transistor Super Mini Mold
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW ≤ 350
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
40 to 90
R33
R33
Symbol
S
h
C
FE
I
I
70 to 150
re
NF
CBO
EBO
f
21e
Note 1
T
Note 2
R34
R34

2
µ
A
V
V
V
V
V
V
s, Duty Cycle ≤ 2%
V
Data Sheet PU10451EJ01V0DS
= +25°C)
CB
EB
CE
CE
CE
CE
CB
= 1 V, I
= 10 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
110 to 240
C
C
C
C
C
E
Test Conditions
E
= 0 mA
= 0 mA, f = 1 MHz
= 7 mA
= 7 mA
= 7 mA, f = 1 GHz
= 7 mA, f = 1 GHz
R35
R35
= 0 mA
MIN.
4.5
40
10
−
−
−
−
TYP.
0.45
7.0
1.4
12
−
−
−
MAX.
240
0.8
0.8
2.7
0.9
–
−
2SC4227
GHz
Unit
µ
µ
dB
dB
pF
−
A
A