2sc4412 Sanyo Semiconductor Corporation, 2sc4412 Datasheet

2sc4412

Manufacturer Part Number

2sc4412

Description

Npn Triple Diffused Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC4412.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2sc4412-4-TB

Quantity:

3 556

Current page: 1 of 3
Download datasheet (25Kb)

Ordering number : ENN3019B

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : QT

* : The 2SC4412 is classsified by 0.1mA h FE as follows.

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

•

Rank

h FE

High breakdown voltage(V CEO 300V).

Small reverse transfer capacitance and excellent high

frequency characteristic(Cre : 1.0pF typ).

Excellent DC current gain ratio(h FE ratio : 0.95 typ).

Adoption of FBET process.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

100 to 200

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

160 to 320

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

h FE 1

h FE 2

Tstg

I CP

P C

I C

V CB =200V, I E =0

V CE =4V, I C =0

V CE =6V, I C =0.1mA

V CE =6V, I C =1mA

2SC4412

High-Voltage Driver Applications

Conditions

Package Dimensions

unit : mm

2018B

Conditions

NPN Triple Diffused Planar Silicon Transistor

11502 TS IM / D1598HA (KT) / 5189MO, TS

TV Camera Deflection

0.4

0.95 0.95

2.9

1.9

[2SC4412]

min

100*

100

Ratings

1 : Base

2 : Emitter

3 : Collector

SANYO : CP

0.16

typ

Ratings

2SC4412

Continued on next page.

--55 to +150

0 to 0.1

max

320*

300

100

250

150

0.1

No.3019-1/3

Unit

Related parts for 2sc4412

2sc4412 Summary of contents

Page 1

... Storage Temperature Electrical Characteristics at Ta=25 C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Marking : The 2SC4412 is classsified by 0.1mA follows. Rank 100 to 200 160 to 320 Any and all SANYO products described or contained herein do not have specifications that can handle ...

Page 2

... Collector-to-Base Voltage 2SC4412 Symbol Conditions =30V =10mA Cob V CB =30V, f=1MHz Cre V CB =30V, f=1MHz h FE ratio (sat =10mA =1mA V BE (sat =10mA =1mA ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. 2SC4412 280 =10 250 240 ...

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