2sc3569 Renesas Electronics Corporation., 2sc3569 Datasheet - Page 2

• Manufacturer Part Number: 2sc3569
• Description: Npn Silicon Triple Diffused Transistor For High-voltage High-speed Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
* Pulse test PW ≤ 350 µ s, duty cycle ≤ 2%
h
TYPICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
2
Collector to emitter voltage
Collector to emitter voltage
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
FE
Marking
CLASSIFICATION
H
FE1
Parameter
20 to 40
M
Case Temperature T
V
V
V
Symbol
V
V
CEX(SUS)1
CEX(SUS)2
CEO(SUS)
h
h
I
I
CE(sat)
BE(sat)
I
I
I
CEX1
CEX2
CBO
CER
EBO
t
FE1
FE2
t
stg
on
t
f
*
*
*
*
30 to 60
I
I
L = 180 µ H, clamped
I
L = 180 µ H, clamped
V
V
V
V
Ta = 125°C
V
V
V
I
I
I
I
Refer to the test circuit.
C
C
C
C
C
C
B1
CB
CE
CE
CE
EB
CE
CE
L
= 0.5 A, I
= 0.5 A, I
= 1.0 A, I
= 0.7 A, I
= 0.7 A, I
= 0.7 A, R
= −I
C
= 400 V, I
= 400 V, R
= 400 V, V
= 400 V, V
= 5.0 V, I
= 5.0 V, I
= 5.0 V, I
( ° C)
B2
= 0.14 A, V
Data Sheet D16187EJ1V0DS
B1
B1
B1
B
B
L
= 0.14 A
= 0.14 A
C
C
C
= 0.1 A, L = 1 mH
= −I
= 0.2 A, −I
E
= 214 Ω,
BE
BE(OFF)
BE(OFF)
= 0
= 0.2 A
= 0.5 A
= 0
Conditions
= 51 Ω, Ta = 125°C
B2
40 to 80
= 0.1 A,
CC
= −1.5 V
= −1.5 V,
K
≅ 150 V
B2
= 0.1 A,
Collector to Emitter Voltage V
MIN.
400
450
400
20
10
TYP.
CE
MAX.
(V)
1.0
1.0
1.0
1.2
1.0
2.5
1.0
10
10
10
80
Unit
mA
mA
µ A
µ A
µ A
µ s
µ s
µ s
V
V
V
V
V
2SC3569