zxmn2a01f Zetex Semiconductors plc., zxmn2a01f Datasheet - Page 4

• Manufacturer Part Number: zxmn2a01f
• Description: 20v N-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN2A01F
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
S E M I C O N D U C T O R S
(at T
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
A
= 25°C unless otherwise stated)
4
MIN.
0.7
20
TYP. MAX. UNIT CONDITIONS.
2.49
5.21
7.47
4.62
0.85
5.65
303
6.1
3.0
0.8
1.0
59
30
23
0.225
0.12
0.95
100
1
µA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
ISSUE 2 - FEBRUARY 2006
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
DS
GS
GS
DS
DS
DD
G
DS
J
GS
J
=4A
=250µA, V
=250µA, V
GS
=25°C, I
=25°C, I
=6.0Ω, V
=20V, V
=4.5V, I
=2.5V, I
=10V,I
=15 V, V
=10V,V
=0V
=10V, I
= 12V, V
D
S
F
GS
= 4A,
GS
=3.2A,
=4A
D
GS
D
D
GS
DS
GS
=4A
=4A
=1.5A
=4.5V,
=5V
=0V
DS
=0V
= V
=0V,
=0V
GS