si7392dp-t1 Vishay, si7392dp-t1 Datasheet

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si7392dp-t1

Manufacturer Part Number
si7392dp-t1
Description
N-channel Reduced Qg, Fast Switching Wfet
Manufacturer
Vishay
Datasheet

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si7392dp-t1-E3
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Notes
a.
Document Number: 72165
S-41427—Rev. D, 26-Jul-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
30
30
(V)
N-Channel Reduced Q
8
Ordering Information: Si7392DP-T1
6.15 mm
0.01375 @ V
D
0.00975 @ V
J
J
a
a
= 150_C)
= 150_C)
7
Parameter
Parameter
r
D
DS(on)
6
D
a
a
PowerPAK SO-8
GS
GS
Bottom View
5
a
a
(W)
D
= 4.5 V
= 10 V
a
1
S
2
S
A
3
S
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
5.15 mm
t v 10 sec
T
T
T
T
A
A
A
A
4
I
= 25_C
= 70_C
= 25_C
= 70_C
G
D
15
13
(A)
g
, Fast Switching WFETr
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJC
I
I
I
DS
GS
D
D
S
D
D
stg
FEATURES
D Extremely Low Q
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D 100% R
APPLICATIONS
D High-Side DC/DC Conversion
Low Switching Losses
Package with Low 1.07-mm Profile
ï Notebook
ï Server
10 secs
Typical
G
4.1
3.2
3.5
15
12
20
53
5
N-Channel MOSFET
g
Tested
ï55 to 150
"20
"50
30
D
S
Steady State
gd
Maximum
Vishay Siliconix
WFET Technology for
1.5
1.8
1.1
4.5
25
70
9
7
Si7392DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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si7392dp-t1 Summary of contents

Page 1

... 0.01375 @ PowerPAK SO-8 6. Bottom View Ordering Information: Si7392DP-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...

Page 2

... Si7392DP Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72165 S-41427—Rev. D, 26-Jul-04 1800 1500 1200 0.040 0.032 0.024 0.016 T = 25_C J 0.008 0.000 0.8 1.0 1.2 Si7392DP Vishay Siliconix Capacitance C iss 900 C oss 600 C 300 rss ï Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.8 V ...

Page 4

... Si7392DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 ï0.0 ï0.2 ï0.4 ï0.6 ï0.8 ï50 ï ï Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 ï www.vishay.com 4 200 160 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 ï Document Number: 72165 S-41427—Rev. D, 26-Jul-04 ï2 ï Square Wave Pulse Duration (sec) Si7392DP Vishay Siliconix 1 10 www.vishay.com 5 ...

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