si7392dp-t1 Vishay, si7392dp-t1 Datasheet - Page 2

• Manufacturer Part Number: si7392dp-t1
• Description: N-channel Reduced Qg, Fast Switching Wfet
• Manufacturer: Vishay

Si7392DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
0
0
b
Parameter
1
V
a
a
DS
V
Output Characteristics
GS
a
ï Drain-to-Source Voltage (V)
= 10 thru 4 V
2
a
a
3
Symbol
J
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
= 25_C UNLESS OTHERWISE NOTED)
g
R
t
t
SD
t
3 V
rr
fs
gs
gd
r
f
g
g
4
5
V
V
I
DS
D
DS
^ 1 A, V
I
= 15 V, V
F
V
= 30 V, V
V
V
V
V
V
V
V
V
DS
= 2.7 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
GS
S
DS
DD
DD
GS
DS
= 4.1 A, V
= 0 V, V
= V
w 5 V, V
= 10 V, I
= 30 V, V
= 15 V, R
= 15 V, R
= 4.5 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 4.5 V, I
GS
= 0 V, T
D
GS
D
GS
GS
D
= 250 mA
D
L
L
= "20 V
= 15 A
= 15 A
= 15 W
= 15 W
= 13 A
= 10 V
= 0 V
= 0 V
J
50
40
30
20
10
D
g
0
= 70_C
= 6 W
0.0
= 15 A
0.5
V
GS
1.0
Transfer Characteristics
ï Gate-to-Source Voltage (V)
Min
1.0
0.5
40
1.5
T
25_C
C
= 125_C
2.0
0.008
0.011
Typ
0.75
3.5
2.6
1.6
40
10
15
46
30
7
9
S-41427—Rev. D, 26-Jul-04
Document Number: 72165
2.5
0.01375
0.00975
3.0
"100
Max
3.0
1.1
2.7
ï55_C
15
25
15
70
17
60
1
5
3.5
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
4.0