si7392dp-t1 Vishay, si7392dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7392dp-t1
• Description: N-channel Reduced Qg, Fast Switching Wfet
• Manufacturer: Vishay

Document Number: 72165
S-41427—Rev. D, 26-Jul-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.024
0.018
0.012
0.006
0.000
0.1
50
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 15 A
0.2
On-Resistance vs. Drain Current
= 15 V
10
3
V
T
SD
J
Q
= 150_C
g
ï Source-to-Drain Voltage (V)
I
0.4
D
ï Total Gate Charge (nC)
ï Drain Current (A)
Gate Charge
V
V
20
6
GS
GS
= 4.5 V
= 10 V
0.6
30
9
0.8
T
J
= 25_C
40
12
1.0
1.2
50
15
0.040
0.032
0.024
0.016
0.008
0.000
1800
1500
1200
900
600
300
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
ï50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
ï25
D
rss
GS
= 15 A
= 10 V
2
6
T
V
V
0
J
DS
GS
ï Junction Temperature (_C)
ï Gate-to-Source Voltage (V)
ï Drain-to-Source Voltage (V)
25
Capacitance
C
12
4
oss
I
D
Vishay Siliconix
50
= 15 A
C
18
6
iss
75
Si7392DP
100
24
www.vishay.com
8
125
150
10
30
3