zxmhc10a07t8 Zetex Semiconductors plc., zxmhc10a07t8 Datasheet

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zxmhc10a07t8

Manufacturer Part Number
zxmhc10a07t8
Description
Complementary 100v Enhancement Mode Mosfet H-bridge
Manufacturer
Zetex Semiconductors plc.
Datasheet
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V
P-Channel = V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 2 - JUNE 2005
DEVICE
ZXMHC10A07T8TA
ZXMHC10A07T8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Single SM-8 Surface Mount Package
Single Phase DC Fan Motor Drive
ZXMH
C10A7
(BR)DSS
(BR)DSS
= -100V : R
= 100V : R
REEL
SIZE
13”
7”
WIDTH
12mm
12mm
TAPE
DS(on)
DS(on)
= 1.0 ; I
= 0.7 ; I
QUANTITY
1000 units
4000 units
PER REEL
D
D
= -1.3A
= 1.4A
1
G
G
D ,
2
1
1
D
2
ZXMHC10A07T8
S
S
2
1
S E M I C O N D U C T O R S
PINOUT
S
S
4
3
D ,
3
D
4
G
G
4
3

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zxmhc10a07t8 Summary of contents

Page 1

... ZXMHC10A07T8TA 7” 12mm ZXMHC10A07T8TC 13” 12mm DEVICE MARKING ZXMH C10A7 ISSUE 2 - JUNE 2005 = -1. QUANTITY PER REEL 1000 units 4000 units 1 ZXMHC10A07T8 PINOUT ...

Page 2

... ZXMHC10A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a) (d) Power Dissipation at T =25°C A Linear Derating Factor (b) (d) Power Dissipation at T =25° ...

Page 3

... ISSUE 2 - JUNE 2005 TYPICAL CHARACTERISTICS 3 ZXMHC10A07T8 ...

Page 4

... ZXMHC10A07T8 N-Channel ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On-Delay Time Rise Time ...

Page 5

... Reverse Recovery Time (3) Reverse Recovery Charge NOTES (1) Measured under pulsed conditions. Pulse width (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JUNE 2005 ZXMHC10A07T8 = 25°C unless otherwise stated) amb SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V ...

Page 6

... ZXMHC10A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 6 ...

Page 7

... N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 ZXMHC10A07T8 ...

Page 8

... ZXMHC10A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 8 ...

Page 9

... P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 ZXMHC10A07T8 ...

Page 10

... ZXMHC10A07T8 PACKAGE OUTLINE Controlling dimensions are in millimetres. Approximate conversions are given in inches © Zetex Semiconductors plc 2005 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 München Hauppauge, NY 11788 Germany USA Telefon: (49 Telephone: (1) 631 360 2222 ...

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