dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 10

• Manufacturer Part Number: dg648bh
• Description: Gate Turn-off Gto - 4500v
• Manufacturer: Dynex Semiconductor

DG648BH45
10/19
5000
4000
3000
2000
1000
0
0
Conditions:
T
C
dI
6000
5000
4000
3000
2000
j
S
GQ
= 25˚C,
= 2.0µF,
/dt = 40A/µs
20
Conditions:
T
C
I
T
j
Fig.16 Turn-off energy vs rate of rise of reverse gate current
S
= 2000A
= 25˚C,
500
= 2.0µF,
Rate of rise of reverse gate current dI
Fig.15 Turn-off energy vs on-state current
30
1000
On-state current I
40
1500
T
50
- (A)
2000
GQ
/dt - (A/µs)
0.75x V
0.5x V
60
V
0.75x V
DRM
0.5x V
DRM
2500
V
DRM
DRM
DRM
DRM
70
3000