dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 2

• Manufacturer Part Number: dg648bh
• Description: Gate Turn-off Gto - 4500v
• Manufacturer: Dynex Semiconductor

DG648BH45
SURGE RATINGS
GATE RATINGS
THERMAL RATINGS AND MECHANICAL DATA
2/19
Symbol
Symbol
Symbol
T
di
t
dV
P
R
t
R
di
OFF(min)
V
P
ON(min)
OP
I
I
FG(AV)
GQ
th(c-hs)
TSM
FGM
th(j-hs)
T
I
L
RGM
RGM
T
2
D
-
/T
/dt
vj
t
S
/dt
/dt
stg
Surge (non-repetitive) on-state current
I
Critical rate of rise of on-state current
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
DC thermal resistance - junction to heatsink
surface
Contact thermal resistance
Virtual junction temperature
Operating junction/storage temperature range
Clamping force
2
t for fusing
Parameter
Parameter
Parameter
10ms half sine. T
10ms half sine. T
V
Rise time > 1.0 s
To 66% V
To 66% V
I
di
This value maybe exceeded during turn-off
Double side cooled
Anode side cooled
Cathode side cooled
Clamping force 20.0kN
With mounting compound
T
D
GQ
= 2000A, V
= 4500V, I
/dt = 40A/ s, Cs = 2.0 F
DRM
DRM
; R
; V
DM
T
= 2000A, T
RG
GK
= 4500V, T
Conditions
Conditions
j
j
= 125
=125
= -2V, T
Conditions
1.5 , T
o
o
C
- -
C
j
j
= 125
j
= 125
j
= 125˚C,
= 125
per contact
o
o
C, I
C
o
C
FG
> 30A,
Min.
Min.
18.0
100
-40
20
30
50
-
-
-
-
-
-
-
-
1.28 x 10
Max.
1000
16.0
300
175
200
0.045
0.006
0.018
Max.
Max.
0.03
22.0
100
125
125
15
19
16
60
-
-
6
Units
Units
Units
o
o
o
o
V/ s
A/ s
V/ s
A/ s
C/W
C/W
C/W
C/W
A
kW
kN
kA
nH
o
o
W
V
A
C
C
2
s
s
s