dg648bh Dynex Semiconductor, dg648bh Datasheet - Page 3

• Manufacturer Part Number: dg648bh
• Description: Gate Turn-off Gto - 4500v
• Manufacturer: Dynex Semiconductor

CHARACTERISTICS
T
j
Symbol
= 125
Q
E
I
I
I
Q
V
V
E
I
RRM
I
RGM
GQM
t
t
t
t
DM
GT
t
OFF
gs
gq
GQT
gf
GT
ON
TM
d
GQ
r
o
C unless stated otherwise
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
Parameter
At 2000A peak, I
V
At V
V
V
V
V
I
I
I
Snubber Cap Cs = 2.0 F,
di
T
T
FG
DRM
D
D
RGM
D
GQ
= 2000A, V
= 2000A, dI
= 24V, I
= 24V, I
= 3000V
= 30A, rise time < 1.0 s
/dt = 40A/ s
RRM
= 4500V, V
= 16V, No gate/cathode resistor
T
T
= 100A, T
= 100A, T
DM
T
/dt = 300A/ s
= V
Conditions
G(ON)
RG
DRM
= 0V
= 7A d.c.
j
j
= 25
= 25
o
o
C
C
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DG648BH45
10000
12000
Max.
3170
6000
20.0
1.35
22.0
100
690
3.2
1.0
3.0
2.0
3.2
50
50
Units
mA
mA
mA
mJ
mJ
V
V
A
A
C
C
3/19
s
s
s
s
s