ne68039-t1 Renesas Electronics Corporation., ne68039-t1 Datasheet

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ne68039-t1

Manufacturer Part Number
ne68039-t1
Description
Necs Npn Silicon High Frequency Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
NE68039-T1
Manufacturer:
NEC
Quantity:
20 000
NEC's NE680 series of NPN epitaxial silicon transistors is
designed for low noise, high gain and low cost applications.
Both the chip and micro-x versions are suitable for applications
up to 6 GHz. The NE680 die is also available in six different low
cost plastic surface mount package styles. The NE680's high
f
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
35 mA. For higher current applications see the NE681 series.
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: f
• LOW NOISE FIGURE:
• HIGH ASSOCIATED GAIN:
• EXCELLENT LOW VOLTAGE
DESCRIPTION
T
makes it ideal for low voltage/low current applications, down
1.7 dB at 2 GHz
2.6 dB at 4 GHz
12.5 dB at 2 GHz
LOW CURRENT PERFORMANCE
8.0 dB at 4 GHz
2.5
2.0
1.5
1.0
.5
300
NOISE FIGURE & ASSOCIATED GAIN
500
Frequency, f (GHz)
vs. FREQUENCY
1000
NE68018
6V, 5 mA
3V, 5 mA
2000
3000
FREQUENCY TRANSISTOR
NEC's NPN SILICON HIGH
T
= 10 GHz
15
10
25
20
5
18 (SOT 343 STYLE)
30 (SOT 323 STYLE)
00 (CHIP)
39 (SOT 143 STYLE)
California Eastern Laboratories
19 (3 PIN ULTRA
SUPER MINI MOLD)
35 (MICRO-X)
33 (SOT 23 STYLE)
39R (SOT 143R STYLE)
NE680
SERIES

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ne68039-t1 Summary of contents

Page 1

FEATURES • HIGH GAIN BANDWIDTH PRODUCT: f • LOW NOISE FIGURE: 1 GHz 2 GHz • HIGH ASSOCIATED GAIN: 12 GHz 8 GHz • EXCELLENT LOW VOLTAGE LOW ...

Page 2

... NE68033 NE68035 2SC3585 2SC3587 1.6 1.8 3.0 1.7 2.4 2.1 2.6 11.0 9.0 12.5 4 18.5 10.9 16.2 6.7 10 6.7 10.5 12.5 3.7 7.5 50 100 250 50 100 250 1.0 1.0 1.0 1.0 1.0 1.0 0.7 0.3 0.8 0.2 0.7 150 200 290 833 620 550 200 200 200 NE68019 2SC5008 19 TYP MAX 10 1.7 1.9 13.5 9.6 18.5 11.8 7.3 15 9.2 4.4 160 1.0 1.0 0.3 0.7 100 1000 200 NE68039/39R 2SC4095 39 10 1.7 2.5 2.6 11 6.5 18 12.4 8.7 14.5 9.6 4.9 50 100 250 1.0 1.0 0.25 0.8 200 620 200 ...

Page 3

... GHz GHz GHz 50 70 100 (mA POWER DERATING CURVES 400 300 NE68035 NE68033 NE68039 200 NE68019 100 0 50 100 150 0 Ambient Temperature, T (°C) A NE68033 INSERTION GAIN vs. COLLECTOR CURRENT GHz ...

Page 4

TYPICAL PERFORMANCE CURVES FORWARD CURRENT GAIN vs. COLLECTOR CURRENT 500 300 200 100 Collector Current NE68035 NOISE FIGURE vs. COLLECTOR CURRENT GHz ...

Page 5

... CE ANG Rn/50 500 800 18 0.47 1000 33 0.33 1500 41 0.31 2000 58 0. 0.22 500 86 0.18 1000 103 0.12 2000 3000 16 0.50 4000 30 0.36 39 0.33 NE68039 58 0.30 TYPICAL NOISE PARAMETERS 77 0.27 FREQ. 88 0.23 (MHz) 103 0. 2 500 (T = 25°C) A 800 1000 1500 ANG Rn/50 2000 0.37 500 155 0.30 1000 -128 0.33 2000 ...

Page 6

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1.5 2 0.1 GHz GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68018 V = 2.5 V, ...

Page 7

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1.5 2 0.1 GHz -. GHz -.4 -.6 -1.5 -.8 -1 NE68019 V = 2.5 V, ...

Page 8

NE680 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz S 11 -.2 5 GHz -.4 -.6 -1.5 -.8 -1 ...

Page 9

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz S 11 -.2 5 GHz -.4 -.6 -1.5 -.8 -1 NE68033 ...

Page 10

TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz -. -.4 5 GHz -.6 -1.5 -.8 -1 NE68035 ...

Page 11

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz 6 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68039 FREQUENCY S 11 (MHz) MAG ANG 50 0.935 -5.8 100 0.903 -15.3 200 0.826 -26.3 300 0.770 -38.7 400 0.690 -49.6 500 0.618 -58.1 600 0.545 -67 ...

Page 12

NE68018 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...

Page 13

NE68019 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...

Page 14

NE68030 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...

Page 15

NE68033 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...

Page 16

NE68035 NONLINEAR MODEL SCHEMATIC RB_PKG BASE 0.1 ohms CBEX_PKG 0.1pF BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. ...

Page 17

OUTLINE DIMENSIONS (Units in mm) NE68000 (CHIP) (Chip Thickness: 160 µm) 0.35 0.01 0.13 BASE EMITTER 30 PACKAGE OUTLINE 18 2.1 ± 0.2 1.25 ± 0 2.0 ± 0.2 0.65 0.65 0.60 0. +0.10 0.4 -0.05 ...

Page 18

NE680 SERIES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2 2.9 ± 0.2 0.95 1 +0.2 1.5 -0.1 1.1 to 1.4 0 0.1 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 ...

Page 19

... NE68030-T1 3000 NE68033-T1B 3000 NE68035 1 NE68039-T1 3000 NE68039R-T1 3000 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

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