ne685m33-t3 Renesas Electronics Corporation., ne685m33-t3 Datasheet - Page 3

• Manufacturer Part Number: ne685m33-t3
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
0.0001
0.0001
0.001
0.001
Remark The graphs indicate nominal characteristics.
0.01
0.01
100
100
250
200
150
100
0.1
0.1
130
50
10
10
0
1
1
0.4
0.4
V
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
CE
CE
0.5
0.5
25
= 1 V
= 3V
Base to Emitter Voltage V
Base to Emitter Voltage V
Ambient Temperature T
Mounted on Glass Epoxy PCB
(1.08 cm
0.6
0.6
50
2
× 1.0 mm (t) )
0.7
0.7
75
100
0.8
0.8
A
BE
BE
(˚C)
A
(V)
(V)
= +25°C ,unless otherwise specified)
125
0.9
0.9
Data Sheet PU10341EJ02V0DS
150
1.0
1.0
0.0001
0.001
0.01
100
0.5
0.3
0.2
0.1
0.1
0.4
40
35
30
25
20
15
10
10
5
0
0
1
0.4
REVERSE TRANSFER CAPACITANCE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
vs. COLLECTOR TO BASE VOLTAGE
400 A
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
µ
Collector to Emitter Voltage V
0.5
Collector to Base Voltage V
= 2 V
Base to Emitter Voltage V
2
350 A
2
µ
0.6
4
300 A
0.7
µ
4
6
0.8
250 A
BE
6
µ
CB
f = 1 MHz
I
CE
NE685M33
B
(V)
8
(V)
0.9
= 50 A
(V)
150 A
100 A
200 A
µ
µ
µ
µ
1.0
10
8
3