ne68839r-t1 Renesas Electronics Corporation., ne68839r-t1 Datasheet

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ne68839r-t1

Manufacturer Part Number
ne68839r-t1
Description
Surface Mount Npn Silicon High Frequency Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.NE68839R-T1.pdf (19 pages)
ELECTRICAL CHARACTERISTICS
FEATURES
The NE688 series of NPN epitaxial silicon transistors are
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain and high current capability equate to
wide dynamic range and excellent linearity. NE688's low
phase noise distortion and high fT make it an excellent choice
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
age styles, and in chip form.
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
DESCRIPTION
• LOW PHASE NOISE DISTORTION
• LOW NOISE: 1.5 dB at 2.0 GHz
• LOW VOLTAGE OPERATION
• LARGE ABSOLUTE MAXIMUM COLLECTOR
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
• ALSO AVAILABLE IN CHIP FORM
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
R
R
|S
|S
NF
NF
CURRENT: I
MOUNT PACKAGE STYLES
C
I
TH(J-A)
TH(J-C)
I
h
CBO
EBO
P
21E
21E
f
f
RE 4
FE
T
T
MIN
MIN
T
|
|
2
2
Gain Bandwidth Product at
V
Gain Bandwidth Product at
V
Minimum Noise Figure at
V
Minimum Noise Figure at
V
Insertion Power Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance at
V
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
Thermal Resistance(Junction to Case) °C/W
CE
CE
CE
CE
CE
CE
CE
CB
EIAJ
CB
EB
= 1V, I
= 3V, I
= 1 V, I
= 3 V, I
= 1V, I
= 3V, I
= 1 V, I
= 1 V, I
C
MAX = 100 mA
= 1 V, I
= 5 V, I
PACKAGE OUTLINE
2
REGISTERED NUMBER
PART NUMBER
C
C
C
C
C
C
C
E
= 3 mA, f = 2.0 GHz
= 20 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 20 mA, f = 2.0 GHz
= 0 mA, f = 1 MHz
= 3 mA, f = 2.0 GHz
= 7 mA, f = 2.0 GHz
= 3 mA
C
E
= 0 mA
= 0 mA
HIGH FREQUENCY TRANSISTOR
SURFACE MOUNT NPN SILICON
3
at
1
°C/W
GHz
GHz
mW
dB
dB
dB
dB
nA
nA
pF
(T
A
= 25°C)
3.0 4.0
80
4
NE68818
2SC5194
0.65 0.8
1.7
1.5
8.5
18
10
5
160
100
100
150
833
2.5
4.5
3.0
80
3. Pulsed measurement, PW  350 µs, duty cycle  2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
NE68819
2SC5195
18 (SOT 343 STYLE)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
9.5
1.7
1.5
4.0
0.7
19
5
8
1000
160
100
100
125
2.5
0.8
California Eastern Laboratories
2.5
80
4
NE68830
2SC5193
0.75 0.85
4.5
1.7
1.5
3.5
6.5
30
9
160
100
100
150
833
2.5
19 (3 PIN ULTRA SUPER
39R (SOT 143R STYLE)
33 (SOT 23 STYLE)
2.5
80
4
NE68833
2SC5191
NE688
SERIES
0.75 0.85
4.5
8.5
1.7
1.5
3.5
6.5
MINI MOLD)
33
160
100
100
200
625
2.5
NE68839/39R
2SC5192/92R
4.0
80
4
0.65 0.8
4.5
1.7
1.5
4.5
39
9
9
160
100
100
200
625
2.5

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ne68839r-t1 Summary of contents

Page 1

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: I MAX = 100 mA C • AVAILABLE IN ...

Page 2

NE688 SERIES ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C T Operating Junction J Temperature T Storage Temperature STG Notes: 1. ...

Page 3

TYPICAL PERFORMANCE CURVES NE68833 INSERTION GAIN vs. COLLECTOR CURRENT GHz Collector Current D.C. CURRENT GAIN vs. COLLECTOR CURRENT 200 ...

Page 4

NE688 SERIES TYPICAL SCATTERING PARAMETERS GHz 5 GHz . 1 0.1 GHz -.2 -.4 -2 -.6 -1.5 -.8 ...

Page 5

TYPICAL SCATTERING PARAMETERS NE68819 FREQUENCY S 11 GHz MAG ANG 0.1 0.538 -68.800 0.4 0.385 -146.900 0.8 0.358 -179.500 1.0 0.352 170.400 1.5 0.345 152.000 2.0 0.335 137.400 2.5 0.334 ...

Page 6

NE688 SERIES TYPICAL SCATTERING PARAMETERS GHz . GHz 1 0.1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68830 V = 0.5 ...

Page 7

TYPICAL SCATTERING PARAMETERS NE68830 FREQUENCY S 11 GHz MAG ANG 0.1 0.472 -66.200 0.4 0.313 -143.700 0.8 0.289 -171.000 1.0 0.285 -179.400 1.5 0.283 165.900 2.0 0.280 153.300 2.5 0.278 ...

Page 8

TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -.8 -1 NE68833 0.5 mA ...

Page 9

TYPICAL SCATTERING PARAMETERS NE68833 FREQUENCY S 11 GHz MAG ANG 0.1 0.738 -38.900 0.4 0.422 -108.100 0.8 0.317 -152.000 1.0 0.304 -166.400 1.5 0.302 168.000 2.0 0.317 148.300 2.5 0.342 ...

Page 10

NE688 SERIES TYPICAL SCATTERING PARAMETERS GHz . GHz 1 0.1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68839 V = 0.5 ...

Page 11

TYPICAL SCATTERING PARAMETERS NE68839 FREQUENCY S 11 GHz MAG ANG 0.1 0.840 -29.900 0.4 0.574 -94.600 0.8 0.440 -144.900 1.0 0.425 - 162.500 1.5 0.443 167.400 2.0 0.489 147.700 2.5 ...

Page 12

NE688 SERIES NE68800 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF ...

Page 13

NE68818 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR ...

Page 14

NE688 SERIES NE68819 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 ...

Page 15

NE68830 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR ...

Page 16

NE68833 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR ...

Page 17

NE68839 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.8e-16 MJC BF 135.7 XCJC NF 1 CJS VAF 28 VJS IKF 0.6 MJS ISE 3.8e- 1. 12.3 XTF NR 1.1 VTF VAR ...

Page 18

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 0.65 2.0 ± 0.2 0.60 0. +0.10 0.4 -0.05 0.3 0.9 ± 0 0.1 PACKAGE OUTLINE 19 1.6 ...

Page 19

... NE68830-T1 3000 NE68833-T1 3000 NE68839-T1 3000 NE68839R-T1 3000 Note: 1. Lead material: Cu Lead plating: PbSn Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

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