2sd1616c Renesas Electronics Corporation., 2sd1616c Datasheet

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2sd1616c

Manufacturer Part Number
2sd1616c
Description
Npn Silicon Epitaxial Transistor For Low-frequency Power Amplifiers And Mid-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. D16199EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
FEATURES
• Low V
• Large P
• Complementary transistor with the 2SB1116 and 1116A
ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
** Pulse test PW ≤ 350 µ s, duty cycle ≤ 2% per pulsed
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Turn-on time
Storage time
Fall time
V
P
h
CE(sat)
T
FE
= 0.75 W, V
1
/h
CE(sat)
FE
Parameter
Parameter
= 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)
T
in small dimension with versatility
CLASSIFICATION L : 135 to 270 K : 200 to 400 U : 300 to 600 (U rank is not available for the 2SD1616A.)
:
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
CEO
= 50/60 V, I
V
V
Symbol
Symbol
I
NPN SILICON EPITAXIAL TRANSISTOR
C(Pulse)
h
h
V
CE(sat)
BE(sat)
V
V
V
I
I
C(DC)
T
I
FE1
FE2
C
t
P
CBO
EBO
t
BE
CBO
CEO
EBO
T
f
stg
on
t
stg
T
C(DC)
ob
f
T
j
**
**
**
**
**
*
= 1.0 A
2SD1616 2SD1616A
V
V
V
V
V
I
I
V
V
V
I
V
C
C
B1
CB
EB
CE
CE
CE
CB
CE
CC
BE(off)
= 1.0 A, I
= 1.0 A, I
60
50
= −I
= 60 V, I
= 6.0 V, I
= 2.0 V, I
= 2.0 V, I
= 2.0 V, I
= 10 V, I
= 2.0 V, I
−55 to +150
= 10 V, I
Ratings
= −2 to –3 V
B2
0.75
150
6.0
1.0
2.0
= 10 mA
DATA SHEET
B
B
E
E
C
2SD1616, 2SD1616A
= 50 mA
= 50 mA
C
C
C
C
C
= 0
= 0, f = 1.0 MHz
120
= 100 mA
60
= 0
= 100 mA
= 1.0 A
= 50 mA
= 100 mA
Conditions
Unit
°C
°C
W
V
V
V
A
A
PACKAGE DRAWING (UNIT: mm)
SILICON TRANSISTORS
MIN.
135
600
100
81
TYP.
0.15
0.07
0.95
0.07
640
160
0.9
19
600/400
MAX.
100
100
700
0.3
1.2
©
MHz
Unit
mV
nA
nA
pF
µ s
µ s
µ s
V
V
1998
2002

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2sd1616c Summary of contents

Page 1

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low V : CE(sat 0.15 V TYP. ( mA) CE(sat) • Large P in small dimension with versatility T ...

Page 2

TYPICAL CHARACTERISTICS (Ta = 25° ° ° ° Data Sheet D16199EJ1V0DS 2SD1616, 1616A ...

Page 3

Data Sheet D16199EJ1V0DS 2SD1616, 1616A 3 ...

Page 4

The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...

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