2sd1692 Renesas Electronics Corporation., 2sd1692 Datasheet

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2sd1692

Manufacturer Part Number
2sd1692
Description
Npn Silicon Darlington Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. D16191EJ1V1DS00 (1st edition)
Date Published December 2004 NS CP(K)
Printed in Japan
FEATURES
• High DC current gain due to Darlington connection
• Large current capacity and low V
• Large power dissipation TO-126 type power transistor
• Complementary transistor: 2SB1149
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
** Pulse test PW ≤ 350
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
FE
Marking
CLASSIFICATION
h
FE1
Parameter
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2,000 to 5,000
M
µ
s, duty cycle ≤ 2%/per pulsed
V
V
V
P
Symbol
P
h
h
CEO(SUS)
CE(sat)
BE(sat)
T
T
NPN SILICON
I
I
FE1
FE2
CBO
CEO
t
t
(Ta = 25°C)
(Tc = 25°C)
stg
on
t
Symbol
f
I
C(pulse)
**
**
V
V
V
I
C(DC)
T
4,000 to 12,000
**
**
CBO
CEO
T
EBO
CE(sat)
stg
j
*
I
V
V
V
V
I
I
I
I
R
(DARLINGTON CONNECTION)
C
C
C
C
B1
CB
CE
CE
CE
L
= 3.0 A, I
= 1.5 A, I
= 1.5 A, I
= 1.5 A
L
= −I
= 27 Ω, V
= 100 V, I
= 100 V, R
= 2.0 V, I
= 2.0 V, I
B2
−55 to +150
= 1.5 mA
Ratings
B
B
B
CC
±3.0
±5.0
= 3.0 mA, L = 1.0 mH
= 1.5 mA
= 1.5 mA
DATA SHEET
150
100
150
C
C
8.0
1.3
15
E
BE
= 1.5 A
= 3.0 A
8,000 to 20,000
≅ 40 V
= 0
Conditions
= ∞
EPITAXIAL
K
Unit
°C
°C
W
W
V
V
V
A
A
SILICON POWER TRANSISTOR
TRANSISTOR
PACKAGE DRAWING (UNIT: mm)
2,000
1,000
MIN.
100
TYP.
0.9
1.5
0.5
2.0
1.0
2SD1692
20,000
MAX.
Electrode Connection
1.0
1.2
2.0
10
Unit
mA
µ
µ
µ
µ
V
V
V
A
s
s
s
2002

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2sd1692 Summary of contents

Page 1

... − 1 Ω, V ≅ 8,000 to 20,000 2SD1692 Electrode Connection MIN. TYP. MAX. Unit 100 V µ 1.0 mA 2,000 20,000 1,000 0.9 1.2 V 1.5 2.0 V µ 0.5 s µ 2.0 s µ 1.0 s 2002 ...

Page 2

... TYPICAL CHARACTERISTICS (Ta = 25°C) With infinite heatsink Without heatsink Temperature T (°C) Collector to Emitter Voltage V Collector to Emitter Voltage V 2 Ambient Temperature Ta (°C) Pulse Width PW (s) (V) CE Collector Current I (V) CE Data Sheet D16191EJ1V1DS 2SD1692 (A) C ...

Page 3

... Collector Current I (A) C Collector current waveform Data Sheet D16191EJ1V1DS Base current waveform 2SD1692 3 ...

Page 4

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SD1692 M8E 02. 11-1 ...

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