2sd1470attr-e Renesas Electronics Corporation., 2sd1470attr-e Datasheet - Page 3

• Manufacturer Part Number: 2sd1470attr-e
• Description: Silicon Npn Epitaxial, Darlington
• Manufacturer: Renesas Electronics Corporation.

2SD1470
Main Characteristics
Rev.2.00 Aug 10, 2005 page 3 of 5
1.2
0.8
0.4
0.5
0.4
0.3
0.2
0.1
1.0
0.3
0.1
10
0
0
3
Maximum Collector Dissipation Curve
10
Collectot to Emitter Voltage V
Ambient Temperature Ta (°C)
Ta = 25°C
Typical Output Characteristics
Collector Current I
Saturation Voltage vs.
1
30
V
V
CE(sat)
BE(sat)
Collector Curret
50
2
100
Ta = 25°C
I
C
/I
3
100
B
= 1,000
C
300
(mA)
2 µA
I
B
4
4
= 0
CE
1,000
150
(V)
5
0.03
0.01
300
100
1.0
0.3
0.1
10
30
10
3
3
10
Collector to Emitter Voltage V
3
Ta = 25°C
1Shot Pulse
DC Current Transfer Ratio vs.
i
C(peak)
Collector Current I
Ta = 75°C
Area of Safe Operation
30
10
Collector Current
–25
25
100
30
V
Pulse
CE
= 3 V
C
300
100
(mA)
CE
1,000
1,000
(V)