2sd1286-z Renesas Electronics Corporation., 2sd1286-z Datasheet
2sd1286-z
Manufacturer Part Number
2sd1286-z
Description
Npn Silicon Epitaxial Transistor Mp-3
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SD1286-Z.pdf
(4 pages)
Document No. D18287EJ3V0DS00 (3rd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
(Previous No. TC-1669A)
DESCRIPTION
Integrated Circuits.
FEATURES
• High h
• Complement to 2SB963-Z
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
The 2SD1286-Z is designed for Switching, especially in Hybrid
Collector to Base Voltage
Collector to Emitter Voltage
Base to Emitter Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation (T
Junction Temperature
Storage Temperature
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2. When mounted on ceramic substrate of 7.5 cm
FE
= 2000 to 30000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Note 1
A
= 25°C)
NPN SILICON EPITAXIAL TRANSISTOR
Note 2
The mark <R> shows major revised points.
I
I
C(pulse)
V
V
V
A
C(DC)
T
P
CBO
CEO
EBO
T
stg
= 25°C)
T
j
DATA SHEET
−55 to +150
150
2.0
60
60
8
1
2
2
× 0.7 mm
°C
°C
W
V
V
V
A
A
SILICON POWER TRANSISTOR
<R>
PACKAGE DRAWING (Unit: mm)
2.3 ±0.3
Note The depth of notch at the top of the fin is
TO-252 (MP-3Z)
2SD1286-Z
from 0 to 0.2 mm.
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
4
2.3 ±0.3
Note
0.5 ±0.1
1. Base
2. Collector
3. Emitter
4. Collector Fin
2.3 ±0.2
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
Note
1985, 2006
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2sd1286-z Summary of contents
Page 1
... NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SD1286-Z is designed for Switching, especially in Hybrid Integrated Circuits. FEATURES • High h = 2000 to 30000 FE • Complement to 2SB963-Z ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Note 1 Collector Current (pulse) Total Power Dissipation (T = 25° ...
Page 2
... Data Sheet D18287EJ3V0DS 2SD1286-Z ...
Page 3
... Data Sheet D18287EJ3V0DS 2SD1286-Z 3 ...
Page 4
... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SD1286-Z Not all M8E 02. 11-1 ...