2sd1581 Renesas Electronics Corporation., 2sd1581 Datasheet
2sd1581
Manufacturer Part Number
2sd1581
Description
Npn Silicon Epitaxial Transistor For Low-frequency Power Amplifiers
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SD1581.pdf
(4 pages)
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Part Number:
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Document No. D16197EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
collector saturation voltage and low power loss. This transistor is
ideal for use in high current drives such as mortars, relays, and
ramps.
FEATURES
• Ultra high h
• Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
** Pulse test PW ≤ 350 µ s, duty cycle ≤ 2% per pulsed
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
The 2SD1581 is a single type super high h
h
V
h
FE
CE(sat)
FE
= 800 to 3200 (@ V
1
/h
Parameter
Parameter
FE
= 0.18 V TYP. (@ I
CLASSIFICATION M : 800 to 1600 L : 1200 to 2400 K : 2000 to 3200
FE
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FOR LOW-FREQUENCY POWER AMPLIFIERS
CE
C
= 5.0 V, I
Symbol
Symbol
I
NPN SILICON EPITAXIAL TRANSISTOR
V
V
C(pulse)
V
V
V
I
= 1.0 A, I
I
h
h
C(DC)
T
I
V
CE(sat)
BE(sat)
C
P
CBO
EBO
CBO
CEO
EBO
T
f
FE1
FE2
stg
BE
T
ob
T
j
*
C
V
V
V
V
V
I
I
V
V
C
C
B
= 500 mA)
CB
EB
CE
CE
CE
CB
CE
= 1.0 A, I
= 1.0 A, I
= 10 mA)
= 30 V, I
= 10 V, I
= 5.0 V, I
= 5.0 V, I
= 5.0 V, I
= 10 V, I
= 10 V, I
−55 to +150
Ratings
FE
150
2.0
3.0
1.0
30
25
15
transistor and low
DATA SHEET
B
B
E
C
E
E
= 10 mA
= 10 mA
C
C
C
= 0
= 0
= 0, f = 1.0 MHz
= −500 mA
= 500 mA
= 2.0 mA
= 300 mA
Conditions
Unit
°C
°C
W
V
V
V
A
A
*
*
*
*
*
PACKAGE DRAWING (UNIT: mm)
MIN.
800
400
600
150
SILICON TRANSISTOR
TYP.
1500
0.18
0.83
660
350
26
2SD1581
MAX.
3200
0.30
100
100
700
1.2
35
©
MHz
Unit
mV
nA
nA
pF
V
V
−
−
1998
2002
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2sd1581 Summary of contents
Page 1
... NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high h collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. FEATURES • Ultra high 800 to 3200 (@ ...
Page 2
... TYPICAL CHARACTERISTICS (Ta = 25° ° ° ° Data Sheet D16197EJ1V0DS 2SD1581 ...
Page 3
... Data Sheet D16197EJ1V0DS 2SD1581 3 ...
Page 4
... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SD1581 The M8E 00. 4 ...