hn58c256a Renesas Electronics Corporation., hn58c256a Datasheet
hn58c256a
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hn58c256a Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... Description 's Renesas Technology HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. ...
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... HN58C256A Series, HN58C257A Series Ordering Information Type No. Access time HN58C256AP- HN58C256AP-10 100 ns HN58C256AFP- HN58C256AFP-10 100 ns HN58C256AT- HN58C256AT-10 100 ns HN58C257AT- HN58C257AT-10 100 ns HN58C256AP-85E 85 ns HN58C256AP-10E 100 ns HN58C256AFP-85E 85 ns HN58C256AFP-10E 100 ns HN58C256AT-85E 85 ns HN58C256AT-10E 100 ns HN58C257AT-85E 85 ns HN58C257AT-10E 100 ns Rev ...
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... HN58C256A Series, HN58C257A Series Pin Arrangement HN58C256AP/AFP Series A14 A12 A13 A11 A10 I/O7 I/ I/O6 I/ I/ I/O3 SS (Top view) Rev.6.00, Oct. 26.2006, page HN58C256AT Series ...
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... HN58C256A Series, HN58C257A Series Pin Description Pin name A0 to A14 I/ RDY/Busy* RES Note: 1. This function is supported by only the HN58C257A series. Block Diagram Note: 1. This function is supported by only the HN58C257A series High voltage generator V SS RES ...
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... HN58C256A Series, HN58C257A Series Operation Table CE OE Operation Read ×* 2 Standby V IH Write Deselect × × Write inhibit × Data polling × × Program reset Notes: 1. Refer to the recommended DC operating condition. 2. × : Don’t care 3 ...
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... HN58C256A Series, HN58C257A Series DC Characteristics ( +70°C, V Parameter Symbol Min Input leakage current I LI Output leakage current I LO Standby V current I CC CC1 I CC2 Operating V current I CC CC3 Output low voltage V OL Output high voltage V 2 ...
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... HN58C256A Series, HN58C257A Series AC Characteristics ( +70°C, V Test Conditions • Input pulse levels • Input rise and fall time: ≤ • Input timing reference levels: 0.8, 2.0 V • Output load: 1TTL Gate +100 pF • Output reference levels: 1.5 V, 1.5 V Read Cycle ...
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... HN58C256A Series, HN58C257A Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE hold time (CE controlled write setup time OE hold time Data setup time Data hold time ...
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... HN58C256A Series, HN58C257A Series Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out RES * 2 Rev.6.00, Oct. 26.2006, page ACC Data out valid DFR ...
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... HN58C256A Series, HN58C257A Series Byte Write Timing Waveform (1) (WE Controlled) Address Din High-Z 2 RDY/Busy * t RES RES * Rev.6.00, Oct. 26.2006, page OES OEH t DW High-Z ...
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... HN58C256A Series, HN58C257A Series Byte Write Timing Waveform (2) (CE Controlled) Address Din High-Z 2 RDY/Busy * t RES RES * Rev.6.00, Oct. 26.2006, page OES t OEH High-Z ...
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... HN58C256A Series, HN58C257A Series Page Write Timing Waveform (1) (WE Controlled) *7 Address A0 to A14 OES Din t DB High-Z 2 RDY/Busy * t RP RES * 2 t RES V CC Rev.6.00, Oct. 26.2006, page BLC t OEH ...
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... HN58C256A Series, HN58C257A Series Page Write Timing Waveform (2) (CE Controlled) *8 Address A0 to A14 OES Din t DB High-Z 2 RDY/Busy * t RP RES * 2 t RES V CC Rev.6.00, Oct. 26.2006, page BLC t OEH ...
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... HN58C256A Series, HN58C257A Series Data Polling Timing Waveform Address OEH Din X I/O7 Rev.6.00, Oct. 26.2006, page Dout OES t DW Dout X ...
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... HN58C256A Series, HN58C257A Series Toggle bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When the internal programming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program ...
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... HN58C256A Series, HN58C257A Series Software Data Protection Timing Waveform (1) (in protection mode Address 5555 Data AA Software Data Protection Timing Waveform (2) (in non-protection mode Address 5555 2AAA Data AA 55 Rev.6.00, Oct. 26.2006, page BLC 5555 Write address ...
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... HN58C256A Series, HN58C257A Series Functional Description Automatic Page Write Page-mode write feature allows bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional bytes can be written in the same manner. Each additional byte load cycle must be started within 30 µs from the preceding falling edge CE. When high for 100 µ ...
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... HN58C256A Series, HN58C257A Series Write/Erase Endurance and Data Retention Time 5 The endurance is 10 cycles in case of the page programming and 10 (1% cumulative failure rate). The data retention time is more than 10 years when a device is page- 4 programmed less than 10 cycles. Data Protection To prevent this phenomenon, this device has a noise cancelation function that cuts noise if its width less ...
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... HN58C256A Series, HN58C257A Series 2. Data Protection at V On/Off CC When V is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act trigger and turn the EEPROM to program mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable state while the CPU unstable state ...
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... HN58C256A Series, HN58C257A Series 3. Software data protection To prevent unintentional programming, this device has the software data protection (SDP) mode. The SDP is enabled by inputting the following 3 bytes code and write data. SDP is not enabled if only the 3 bytes code is input. To program data in the SDP enable mode, 3 bytes code must be input before write data ...
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... HN58C256A Series, HN58C257A Series Package Dimensions HN58C256AP Series (PRDP0028AB-A / Previous Code: DP-28, DP-28V) JEITA Package Code RENESAS Code Previous Code P-DIP28-13.4x35.6-2.54 PRDP0028AB-A DP-28/DP-28V Rev.6.00, Oct. 26.2006, page MASS[Typ.] 4. Dimension in Millimeters Reference Symbol Min Nom ...
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... HN58C256A Series, HN58C257A Series Package Dimensions (cont.) HN58C256AFP Series (PRSP0028DC-A / Previous Code: FP-28D, FP-28DV) JEITA Package Code RENESAS Code Previous Code P-SOP28-8.4x18.3-1.27 PRSP0028DC Index mark Rev.6.00, Oct. 26.2006, page MASS[Typ.] FP-28D 0. Terminal cross section ...
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... HN58C256A Series, HN58C257A Series Package Dimensions (cont.) HN58C256AT Series (PTSA0028ZB-A / Previous Code: TFP-28DB, TFP-28DBV) JEITA Package Code RENESAS Code P-TSOP(1)28-8x11.8-0.55 PTSA0028ZB-A TFP-28DB/TFP-28DBV Index mark Rev.6.00, Oct. 26.2006, page Previous Code MASS[Typ.] 0.23g Terminal cross section F Detail F NOTE) 1. DIMENSION" ...
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... HN58C256A Series, HN58C257A Series Package Dimensions (cont.) HN58C257AT Series (PTSA0032KD-A / Previous Code: TFP-32DA, TFP-32DAV) JEITA Package Code RENESAS Code Previous Code P-TSOP(1)32-8x12.4-0.50 PTSA0032KD-A TFP-32DA/TFP-32DAV Index mark Rev.6.00, Oct. 26.2006, page MASS[Typ.] 0.26g Terminal cross section ...
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... Oct. 24. 1997 8 Timing Waveforms Read Timing Waveform: Correct error 5.00 Nov. 17. 2003 Change format issued by Renesas Technology Corp. 2 Ordering Information Addition of HN58C256AFP-85E, HN58C256AFP-10E, HN58C256AT-85E, HN58C256AT-10E, HN58C257AT-85E, HN58C257AT-10E 20-23 Package Dimensions FP-28D to FP-28D, FP-28DV TFP-28DB to TFP-28DB, TFP-28DBV TFP-32DA to TFP-32DA, TFP-32DAV 6.00 Oct. 26, 2006 2 Ordering Information ...
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Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...