as7c3364ntd32b Alliance Memory, Inc, as7c3364ntd32b Datasheet - Page 8

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as7c3364ntd32b

Manufacturer Part Number
as7c3364ntd32b
Description
3.3v 32/36 Pipelined Sram With
Manufacturer
Alliance Memory, Inc
Datasheet
DC electrical characteristics for 3.3V I/O operation
DC electrical characteristics for 2.5V I/O operation
† LBO pin has an internal pull-up and input leakage = -10 µA.
*
**
I
1
V
Parameter
Operating power supply
current
Standby power supply
current
DD
Input leakage current
Output leakage current
Input high (logic 1) voltage
Input low (logic 0) voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Input high (logic 1) voltage
Input low (logic 0) voltage
Output high voltage
Output low voltage
V
IH
I
4/28/05; v.1.3
IL
CC
max < VDD +1.5V for pulse width less than 0.2 X t
min = -1.5 for pulse width less than 0.2 X t
operating conditions and maximum limits
given with no output loading. I
1
Parameter
Parameter
CC
increases with faster cycle times and greater output loading.
Sym
I
I
I
I
SB1
SB2
CC
SB
CYC
Sym
Sym
|I
V
V
|I
V
V
V
|I
V
|I
V
V
LO
LO
LI
OH
LI
OH
OL
OL
IH
IL
IH
IL
|
|
|
|
CYC
CE0 < V
OE ≥ V
All V
Deselected, f = f
OE ≥ V
IN
all V
I
V
Deselected, f = 0, ZZ < 0.2V,
IH
I
OH
≤ 0.2V or > V
IL
OL
DD
Alliance Semiconductor
, V
Address and control pins
Address and control pins
I
, CE1 > V
all V
OUT
IN
= –4 mA, V
I
I
= 8 mA, V
V
IH
I
I
OH
OH
= Max, 0V < V
f = f
DD
OL
OL
Test conditions
DD
≤ 0.2V or ≥ V
, V
Address and control pins
Address and control pins
= 0 mA, ZZ < V
IN
= –4 mA, V
= –1 mA, V
Conditions
= Max, 0V < V
= 8 mA, V
= 1 mA, V
Max
= Max, 0V < V
DD
I/O pins
I/O pins
≤ V
Max
IH
, ZZ < V
= Max, 0V < V
Conditions
IL
DD
, ZZ ≥ V
DDQ
, CE2 < V
I/O pins
I/O pins
DDQ
or ≥ V
– 0.2V, Deselected,
DDQ
DDQ
®
= 3.465V
DD
IN
DDQ
DDQ
= 3.135V
IL
DD
< V
– 0.2V
IH
OUT
IL
= 2.625V
= 2.625V
IN
IL
= 2.375V
= 2.375V
– 0.2V,
DD
, f = f
< V
OUT
< V
DD
Max
DDQ
< V
,
DDQ
-0.3**
-0.5**
Min
2.4
2*
2*
-2
-2
-200
375
135
30
30
V
-0.3**
-0.3**
V
AS7C3364NTD32B
AS7C3364NTD36B
Min
1.7*
1.7*
DDQ
1.7
2.0
DD
-2
-2
Max
0.8
0.8
0.4
-166
2
2
350
120
+0.3
30
30
+0.3
V
V
DDQ
DD
Max
Unit
-133
325
0.7
0.7
0.7
0.4
110
µA
µA
30
30
V
V
V
V
2
2
+0.3
+0.3
P. 8 of 19
Unit
mA
mA
Unit
µA
µA
V
V
V
V
V
V

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