as7c251mntf18a Alliance Memory, Inc, as7c251mntf18a Datasheet - Page 8
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as7c251mntf18a
Manufacturer Part Number
as7c251mntf18a
Description
2.5v Flowthrough Synchronous Sram With
Manufacturer
Alliance Memory, Inc
Datasheet
1.AS7C251MNTF18A.pdf
(18 pages)
DC electrical characteristics
† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.
*
**
I
1 I
V
DD
Input leakage current
Output leakage current
Input high (logic 1) voltage
Input low (logic 0) voltage
Output high voltage
Output low voltage
Operating power supply current
Standby power supply current
V
CC
IH
12/23/04, v 1.1
IL
max < VDD +1.5V for pulse width less than 0.2 X t
given with no output loading. I
min = -1.5 for pulse width less than 0.2 X t
operating conditions and maximum limits
Parameter
Parameter
†
CC
increases with faster cycle times and greater output loading.
1
CYC
Sym
|I
V
V
V
|I
V
LO
LI
OH
OL
IH
IL
Sym
I
I
I
I
|
SB1
SB2
|
CC
SB
CYC
CE0 < V
OE ≥ V
All V
Deselected, f = f
Alliance Semiconductor
IN
all V
I
V
Deselected, f = 0, ZZ < 0.2V,
IH
I
OH
IL
≤ 0.2V or > V
OL
DD
, V
Address and control pins
Address and control pins
I
, CE1 > V
all V
OUT
IN
= –4 mA, V
= 8 mA, V
= Max, 0V < V
f = f
DD
≤ 0.2V or ≥ V
= 0 mA, ZZ < V
IN
Conditions
Conditions
= Max, 0V < V
Max
I/O pins
I/O pins
≤ V
Max
IH
, ZZ < V
DD
IL
, ZZ ≥ V
DDQ
, CE2 < V
®
DDQ
or ≥ V
– 0.2V, Deselected,
= 2.625V
DD
IN
= 2.375V
IL
DD
< V
IH
– 0.2V
OUT
IL
IL
– 0.2V,
DD
, f = f
< V
Max
DDQ
,
275
-75
90
60
50
AS7C251MNTF18A
-0.3**
-0.3**
Min
1.7*
1.7*
1.7
-2
-2
–
250
-85
80
60
50
V
V
DDQ
DD
Max
0.7
0.7
0.7
2
2
–
+0.3
230
-10
+0.3
80
60
50
P. 8 of 18
Unit
mA
mA
Unit
µA
µA
V
V
V
V
V
V