2sb1261 Renesas Electronics Corporation., 2sb1261 Datasheet
2sb1261
Manufacturer Part Number
2sb1261
Description
2s Pnp Silicon Epitaxial Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SB1261.pdf
(5 pages)
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Document No. D18262EJ4V0DS00 (4th edition)
Date Published December 2007 NS
Printed in Japan
DESCRIPTION
Switching, especially in Hybrid Integrated Circuits.
FEATURES
• High h
• Low V
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
The 2SB1261-Z is designed for Audio Frequency Amplifier and
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation (T
Total Power Dissipation (T
Junction Temperature
Storage Temperature
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2. When mounted on ceramic substrate of 7.5 cm
CE(sat)
FE
h
V
FE
CE(sat)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 100 to 400
≤ 0.3 V
Note 1
A
C
= 25°C)
= 25°C)
PNP SILICON EPITAXIAL TRANSISTOR
Note 2
The mark <R> shows major revised points.
I
V
V
I
C(pulse)
I
V
C(DC)
B(DC)
P
P
T
T
CBO
CEO
EBO
stg
T1
T2
A
j
= 25°C)
DATA SHEET
−55 to +150
−7.0
−3.0
−5.0
−0.5
−60
−60
150
2.0
10
2
× 0.7 mm
°C
°C
W
W
V
V
V
A
A
A
SILICON POWER TRANSISTOR
Note The depth of notch at the top of the fin is
PACKAGE DRAWING (Unit: mm)
2.3 ±0.3
from 0 to 0.2 mm.
TO-252 (MP-3Z)
2SB1261-Z
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
4
2.3 ±0.3
Note
0.5 ±0.1
1. Base
2. Collector
3. Emitter
4. Collector Fin
2.3 ±0.2
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
Note
1986, 2006
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2sb1261 Summary of contents
Page 1
... PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High 100 to 400 FE FE ≤ 0.3 V • Low V V CE(sat) CE(sat) ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage ...
Page 2
... Data Sheet D18262EJ4V0DS 2SB1261-Z ...
Page 3
... Data Sheet D18262EJ4V0DS 2SB1261-Z 3 ...
Page 4
... Data Sheet D18262EJ4V0DS 2SB1261-Z ...
Page 5
... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SB1261-Z M8E 02. 11-1 ...