np34n055hhe Renesas Electronics Corporation., np34n055hhe Datasheet - Page 2

• Manufacturer Part Number: np34n055hhe
• Description: Switching N-channel Power Mos Fet Industrial Use
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
Drain to Source On-state Resistance
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
PG.
= 20
CHARACTERISTICS
PG.
0 V
I
G
V
= 2 mA
50
R
DD
G
D.U.T.
= 25
I
D
50
I
AS
D.U.T.
BV
DSS
Starting T
R
V
DD
L
V
DS
L
V
DD
ch
SYMBOL
R
V
V
| y
I
C
C
t
t
Q
Q
I
C
DS(on)
GS(th)
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
A
t
t
oss
fs
iss
rss
GS
GD
rr
r
f
G
rr
= 25 °C)
|
Data Sheet D14153EJ3V0DS
V
V
V
V
V
V
V
f = 1 MHz
I
V
V
R
I
V
V
I
I
di/dt = 100 A/ s
V
0
D
D
F
F
GS
DS
DS
DS
GS
DS
GS
GS(on)
DD
DD
GS
G
GS
= 17 A
= 34 A
= 34 A, V
= 34 A, V
Duty Cycle
= 1
= 1 s
= 10 V, I
= V
= 10 V, I
= 55 V, V
= ±20 V, V
= 25 V
= 0 V
= 28 V
= 44 V
= 10 V
TEST CIRCUIT 2 SWITCHING TIME
PG.
= 10 V
GS
, I
TEST CONDITIONS
D
GS
GS
D
D
= 250 A
GS
= 17 A
= 0 V
= 0 V
= 17 A
DS
1 %
= 0 V
R
= 0 V
G
D.U.T.
NP34N055HHE, NP34N055IHE
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
2.0
6
V
V
V
GS
DS
0
DS
0
10 %
TYP.
1600
t
250
120
d(on)
3.0
1.0
15
12
21
15
35
12
30
12
40
58
90 %
9
t
on
10 % 10 %
t
MAX.
2400
r
±10
380
220
4.0
29
19
10
47
38
70
45
V
t
GS(on)
d(off)
t
off
UNIT
90 %
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
90 %
t
A
A
f