maq5602f Hope Microelectronics co., Ltd, maq5602f Datasheet - Page 4

• Manufacturer Part Number: maq5602f
• Description: Npn Sige Rf Powertransistor
• Manufacturer: Hope Microelectronics co., Ltd

□ DC CHARACTERISTICS
h
BV
BV
BV
I
Cc
Hfe
Tj=25 ℃ unless otherwise specified
S
FE
Fig 1. DC Current gain v.s collector current
SYMBOL
MAQ5602F
160
140
120
100
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CBO
CEO
EBO
80
60
40
20
0
0.00
0.10
V
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
CE
= 4.8V ; Tj =25℃
0.20
PARAMETER
0.30
0.40
Ic(A)
0.50
open emitte
open base
open collector
Fig 2. Collector-base capacitance v.s collector-
[pF]
Cc
base voltage(DC)
This item can replace THN5602F
CONDITION
f=900MHz; V
6
5
4
3
2
0
2
CE
=4.8V; I
4
http://www.hoperf.com
MIN.
0.1
CQ
20
60
8
3
6
=5mA; Ts < 60℃
MAX.
8
200
4.5
V
CB
10
[V]
UNIT
mA
pF
V
V
V