std2n50 STMicroelectronics, std2n50 Datasheet

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std2n50

Manufacturer Part Number
std2n50
Description
N - Channel Enhancement Mode Power Mos Transistor
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
STD2N50
Manufacturer:
ST
Quantity:
12 500
Part Number:
STD2N50
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std2n50-1
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std2n50T4
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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
December 1996
STD2N50
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
I
V
D M
V
V
T
P
DG R
I
I
T
D S
GS
stg
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
DS(on)
500 V
V
= 4.5
DSS
Parameter
< 5.5
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
2 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
(Suffix ”-1”)
TO-251
IPAK
-65 to 150
Value
1
1.25
0.36
500
500
150
45
2
8
20
2
3
STD2N50
(Suffix ”T4”)
TO-252
DPAK
1
W/
Unit
3
o
o
W
V
A
A
V
V
A
C
C
o
1/10
C

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std2n50 Summary of contents

Page 1

... Pulse width limited by safe operating area December 1996 POWER MOS TRANSISTOR IPAK TO-251 (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM = 100 STD2N50 DPAK TO-252 (Suffix ”T4”) Value Unit 500 V 500 1. ...

Page 2

... STD2N50 THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink t hc- sin k T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited Single Pulse Avalanche Energy ...

Page 3

... GS (see test circuit, figure 5) Test Conditions di/dt = 100 100 150 (see test circuit, figure 5) Thermal Impedance STD2N50 Min. Typ. Max. Unit 120 Min. Typ. Max. Unit ...

Page 4

... STD2N50 Derating Curve Transfer Characteristics Static Drain-source On Resistance 4/10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage ...

Page 5

... Capacitance Variations Normalized On Resistance vs Temperature Turn-off Drain-source Voltage Slope Normalized Gate Threshold Voltage vs Temperature Turn-on Current Slope Cross-over Time STD2N50 5/10 ...

Page 6

... STD2N50 Switching Safe Operating Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/10 Accidental Overload Area Fig. 2: Unclamped Inductive Waveforms ...

Page 7

... Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge Test Circuit STD2N50 7/10 ...

Page 8

... STD2N50 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 8/10 mm MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 0.051 ...

Page 9

... H 9.35 L2 0.8 L4 0.6 H DETAIL ”A” MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 1 0.023 DETAIL ”A” L4 STD2N50 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.031 0.039 0068772-B 9/10 ...

Page 10

... STD2N50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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