std22nm20n STMicroelectronics, std22nm20n Datasheet

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std22nm20n

Manufacturer Part Number
std22nm20n
Description
N-channel 200v - 0.088ohm - 22a Dpak Ultra Low Gate Charge Mdmesh Ii Mosfet
Manufacturer
STMicroelectronics
Datasheet

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November 2005
Table 1: General Features
DESCRIPTION
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technol-
ogy to lower voltages. The device exhibits world-
wide lowest gate charge for any given on-
resistance. Its use is therefore ideal as primary
switch in isolated DC-DC converters for Telecom
and Computer applications. Used in combination
with
products, it contributes to reducting losses and
boosting effeciency.
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density allowing system miniaturization
and higher efficiencies
Table 2: Order Codes
STD22NM20N
WORLDWIDE LOWEST GATE CHARGE
TYPICAL R
HIGH dv/dt and AVALANCHE CAPABILITIES
LOW INPUT CAPACITANCE
LOW GATE RESISTANCE
STD22NM20NT4
TYPE
SALES TYPE
secondary-side
DS
ULTRA LOW GATE CHARGE MDmesh™ II MOSFET
(on) = 0.088
200 V
V
DSS
low-voltage
< 0.105
R
D22NM20N
MARKING
DS(on)
N-CHANNEL 200V - 0.088 - 22A DPAK
STripFET™
22 A
I
D
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
DPAK
STD22NM20N
DPAK
1
TAPE & REEL
PACKAGING
3
Rev. 5
1/10

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std22nm20n Summary of contents

Page 1

... Table 2: Order Codes SALES TYPE STD22NM20NT4 November 2005 N-CHANNEL 200V - 0.088 - 22A DPAK Figure 1: Package R I DS(on) D < 0.105 22 A Figure 2: Internal Schematic Diagram STripFET™ MARKING PACKAGE D22NM20N DPAK STD22NM20N 3 1 DPAK PACKAGING TAPE & REEL Rev. 5 1/10 ...

Page 2

... STD22NM20N Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous (*) Drain Current (pulsed Total Dissipation at T TOT Derating Factor dv/dt (2) Peak Diode Recovery voltage slope T Storage Temperature ...

Page 3

... di/dt = 100 A/µ 100V 25° (see test circuit, Figure 17 di/dt = 100 A/µ 100V 150° (see test circuit, Figure 17) STD22NM20N Min. Typ. Max. 200 = 125 °C 100 3.5 4.2 0.088 0.105 Min. Typ. Max 800 GS 330 ...

Page 4

... STD22NM20N Figure 3: Safe Operating Area Figure 4: Output Characteristics Figure 5: Transconductance 4/10 Figure 6: Thermal Impedance Figure 7: Transfer Characteristics Figure 8: Static Drain-source On Resistance ...

Page 5

... Figure 9: Gate Charge vs Gate-source Voltage Figure 10: Normalized Gate Thereshold Volt- age vs Temperature Figure 11: Source-Drain Diode Forward Char- acteristics Figure 12: Capacitance Variations Figure 13: Normalized On Resistance vs Tem- perature Figure 14: Normalized BVdss vs Temperature STD22NM20N 5/10 ...

Page 6

... STD22NM20N Figure 15: Unclamped Inductive Load Test Cir- cuit Figure 16: Switching Times Test Circuit For Resistive Load Figure 17: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/10 Figure 18: Unclamped Inductive Wafeform Figure 19: Gate Charge Test Circuit ...

Page 7

... B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 inch MAX. MIN. TYP. 2.40 0.087 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.018 0.60 0.019 6.20 0.236 6.60 0.252 4.60 0.173 10.10 0.368 0.031 1.00 0.024 STD22NM20N MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.039 o 0 P032P_B 7/10 ...

Page 8

... STD22NM20N DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 K0 2.55 2.75 P0 3.9 4.1 P1 7.9 8.1 P2 1.9 2 15.7 16.3 8/10 TAPE AND REEL SHIPMENT inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 ...

Page 9

... Table 9: Revision History Date Revision 31-May-2004 1 15-Mar-2005 2 09-May-2005 3 09-Jun-2005 4 04-Nov-2005 5 Description of Changes First Release. Update version. Complete version. New update Corrected value on Table 8 STD22NM20N 9/10 ...

Page 10

... STD22NM20N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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