s72ns256nd0-7k Meet Spansion Inc., s72ns256nd0-7k Datasheet - Page 3

• Manufacturer Part Number: s72ns256nd0-7k
• Description: Based Mcps
• Manufacturer: Meet Spansion Inc.

Data Sheet
General Description
Distinctive Characteristics
Product Selector Guide
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not
design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
S72NS-N Based MCPs
Stacked Multi-Chip Product (MCP) MirrorBit
128/256 Mb (8/16 M x 16 bit), 110nm CMOS 1.8 Volt-only,
Multiplexed, Simultaneous Read/Write, Burst Mode Flash Memory
and 128/256-Mb (8/16-M x 16-bit) DDR DRAM
Publication Number S72NS128_256ND0_00
MCP Features
T Power supply voltage of 1.7 V to 1.95 V
T Burst Speeds
This document contains information on the S72NS-N MCP product family. Refer to the S29NS-N
data sheet (S29NS256/128N_01, revision A4) for full electrical specifications of the Flash memory
component. Refer to the DDR SDRAM Type 1 data sheet (revision A2) for full electrical specifica-
tions of the DDR SDRAM component. Refer to the DDR SDRAM Type 5 data sheet (revision A0)
for full electrical specifications of the DDR SDRAM component
The S72NS Series is a product line of stacked Multi-Chip Product (MCP) products and consists of:
The products covered by this document are listed in the table below.
S72NS256ND0-7K
S72NS128ND0-1K
S72NS512ND0-7K
S72NS256ND0-73
S72NS256ND0-72
S72NS128ND0-13
S72NS128ND0-12
S72NS512ND0-73
S72NS512ND0-72
S72NS512NE0-7K
S72NS512NE0-73
S72NS512NE0-72
S72NS256ND0-7J
S72NS128ND0-1J
S72NS512ND0-7J
S72NS512NE0-7J
Device- Model#
— Flash = 66 MHz, 80 MHz
— DRAM = 133 MHz
Flash Density
T
T
256 Mb
128 Mb
512 Mb
One or more NS family multiplexed Flash memory die
DDR DRAM
Flash Density
256 Mb
128 Mb
512 Mb
512 Mb
DRAM Density
128 Mb
128 Mb
128 Mb
256 Mb
Revision B
TM
S72NS128ND0
S72NS256ND0
S72NS512ND0
Flash Memory & DRAM
128 Mb
Flash Speed (MHz)
Amendment 1
T Packages, 133-ball FBGA
T Operating Temperature of 25°C to +85°C
66
80
66
80
66
80
66
80
66
80
66
80
66
80
66
80
— 11.0 x 10.0 x 1.0 mm
— 8.0 x 8.0 x 1.0 mm
DRAM Density
Issue Date November 9, 2005
DRAM Speed (MHz)
133
133
S72NS256ND0
S72NS512NE0
INFORMATION
256 Mb
ADVANCE
Supplier
Type 1
Type 5
Type 1
Type 5
Type 1
Type 5
Type 1
Type 5
DRAM
DRAM
DRAM
DRAM
DRAM
DRAM
DRAM
DRAM
11x10mm
11x10mm
NLC133,
NLE133,
P ackage
MTA133
8x8mm