k4t56043qf Samsung Semiconductor, Inc., k4t56043qf Datasheet - Page 35

• Manufacturer Part Number: k4t56043qf
• Description: 256mb F-die Ddr2 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

256Mb F-die DDR2 SDRAM
18. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for
this parameter, but system performance (bus turnaround) will degrade accordingly.
19. MIN ( t CL, t CH) refers to the smaller of the actual clock low time and the actual clock high time as pro-
vided to the device (i.e. this value can be greater than the minimum specification limits for t CL and t CH). For
example, t CL and t CH are = 50% of the period, less the half period jitter ( t JIT(HP)) of the clock source, and
less the half period jitter due to crosstalk ( t JIT(crosstalk)) into the clock traces.
20. t QH = t HP – t QHS, where:
21. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the
output drivers for any given cycle.
22. t DAL = (nWR) + ( tRP/tCK):
For each of the terms above, if not already an integer, round to the next highest integer. tCK refers to the
application clock period. nWR refers to the t WR parameter stored in the MRS.
Example: For DDR533 at t CK = 3.75 ns with t WR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns)
clocks =4 +(4)clocks=8clocks.
23. The clock frequency is allowed to change during self–refresh mode or precharge power-down mode. In
case of clock frequency change during precharge power-down, a specific procedure is required as described
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low ( tCH, tCL).
tQHS accounts for:
signal and V
1) The pulse duration distortion of on-chip clock circuits; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the
CK
CK
next transition, both of which are, separately, due to data pin skew and output pattern effects, and p-
channel to n-channel variation of the output drivers.
IL(dc)
for a falling signal applied to the device under test.
tIS
tIH
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tIS
tIH
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Preliminary
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V
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DDQ
IH(ac)
IH(dc)
REF
IL(dc)
IL(ac)
SS
max
max
min
min