k4h560838c Samsung Semiconductor, Inc., k4h560838c Datasheet - Page 44

• Manufacturer Part Number: k4h560838c
• Description: Ddr Sdram Specification Version 0.6
• Manufacturer: Samsung Semiconductor, Inc.

256Mb C-die(x4/8) DDR SDRAM
8.2 AC Overshoot/Undershoot specification
8.2.1 Overshoot/Undershoot specification for Address and Control Pins
Parameter
Maximum peak amplitude allowed for overshoot (See Figure 1):
Maximum peak amplitude allowed for undershoot (See Figure 1):
The area between the overshoot signal and VDD must be less than or
equal to (See Figure 1):
The area between the undershoot signal and GND must be less than or
equal to (See Figure 1):
Table 15. Overshoot/Undershoot specification for Address and Control Pins
Notes:
1. This specification is intended for only DDR200, DDR266A and DDR266B devices.
2. This specification is intended for only devices with NO clamp protection
3. This compliance is to be verified by design only.
The specification for DDR333 will be updated.
-1
-2
-3
-4
-5
Figure 24. AC overshoot/Undershoot Definition
5
4
3
2
1
0
Maximum Amplitude = 1.6V
0
Area = 4.5V-ns
0.5
0.6875
VDD
1.0
Overshoot
1.5
2.0
2.5
3.0
Tims(ns)
3.5
- 44 -
4.0
4.5
5.0
Maximum Amplitude = 1.6V
5.5
undershoot
GND
6.0
6.3125
Specification
1.6 V
1.6 V
4.5 V-ns
4.5 V-ns
6.5
7.0
REV. 0.7 Jan. 31. 2002
Notes
1,2,3
1,2,3
1,2,3
1,2,3